III-nitride on silicon electrically injected microrings for nanophotonic circuits

Abstract

Nanophotonic circuits using group III-nitrides on silicon are still lacking one key component: efficient electrical injection. In this paper we demonstrate an electrical injection scheme using a metal microbridge contact in thin III-nitride on silicon mushroom-type microrings that is compatible with integrated nanophotonic circuits with the goal of achieving electrically injected lasing. Using a central buried n-contact to bypass the insulating buffer layers, we are able to underetch the microring, which is essential for maintaining vertical confinement in a thin disk. We demonstrate direct current room-temperature electroluminescence with 440 mW/cm${}^2$ output power density at 20 mA from such microrings with diameters of 30 to 50 $\mu$m. The first steps towards achieving an integrated photonic circuit are demonstrated.

References in corpus (6)

• Isotope-selective photo-ionization for calcium ion trapping
• Ultra-high-Q UV microring resonators based on single-crystalline AlN platform
• High Q micro-ring resonators fabricated from polycrystalline aluminum nitride films for near infrared and visible photonics
• High quality factor nitride-based optical cavities: microdisks with embedded GaN/Al(Ga)N quantum dots
• Blue Microlasers Integrated on a Photonic Platform on Silicon
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Cited by in corpus (3)

• Analysis of low-threshold optically pumped III-nitride microdisk lasers
• Monolithic integration of ultraviolet microdisk lasers into photonic circuits in a III-nitride-on-silicon platform
• Demonstration of critical coupling in an active III-nitride microdisk photonic circuit on silicon