235 citations · 433 across the 7 of their papers we have counts for
7 papers
Reduced lasing thresholds in GeSn microdisk cavities with defect management of the optically active region
Anas Elbaz, Riazul Arefin, Emilie Sakat +20
GeSn alloys are nowadays considered as the most promising materials to build Group IV laser sources on silicon (Si) in a full complementary metal oxide semiconductor-compatible app…
Ultra-low threshold cw and pulsed lasing in tensile strained GeSn alloys
A. Elbaz, D. Buca, N. Von den Driesch +15
GeSn alloys are the most promising semiconductors for light emitters entirely based on group IV elements. Alloys containing more than 8 at.% Sn have fundamental direct band-gaps, s…
Demonstration of critical coupling in an active III-nitride microdisk photonic circuit on silicon
Farsane Tabataba-Vakili, Laetitia Doyennette, Christelle Brimont +11
On-chip microlaser sources in the blue constitute an important building block for complex integrated photonic circuits on silicon. We have developed photonic circuits operating in…
III-nitride on silicon electrically injected microrings for nanophotonic circuits
Farsane Tabataba-Vakili, Stéphanie Rennesson, Benjamin Damilano +14
Nanophotonic circuits using group III-nitrides on silicon are still lacking one key component: efficient electrical injection. In this paper we demonstrate an electrical injection…
Blue Microlasers Integrated on a Photonic Platform on Silicon
Farsane Tabataba-Vakili, Laetitia Doyennette, Christelle Brimont +12
The main interest of group-III-nitride nanophotonic circuits is the integration of active structures and laser sources. A photonic platform of group-III-nitride microdisk lasers in…
Q factor limitation at short wavelength (around 300 nm) in III-nitride-on-silicon photonic crystal cavities
Farsane Tabataba-Vakili, Iannis Roland, Thi-Mo Tran +10
III-nitride-on-silicon L3 photonic crystal cavities with resonances down to 315 nm and quality factors (Q) up to 1085 at 337 nm have been demonstrated. The reduction of the quality…
Mott transition in Cr-doped V2O3 studied by ultrafast reflectivity: electron correlation effects on the transient response
B. Mansart, D. Boschetto, S. Sauvage +2
The ultrafast response of the prototype Mott-Hubbard system (V1-xCrx)2O3 was systematically studied with fs pump-probe reflectivity, allowing us to clearly identify the effects of…