65 citations · 166 across the 5 of their papers we have counts for
6 papers
Reduced lasing thresholds in GeSn microdisk cavities with defect management of the optically active region
Anas Elbaz, Riazul Arefin, Emilie Sakat +20
GeSn alloys are nowadays considered as the most promising materials to build Group IV laser sources on silicon (Si) in a full complementary metal oxide semiconductor-compatible app…
Ultra-low threshold cw and pulsed lasing in tensile strained GeSn alloys
A. Elbaz, D. Buca, N. Von den Driesch +15
GeSn alloys are the most promising semiconductors for light emitters entirely based on group IV elements. Alloys containing more than 8 at.% Sn have fundamental direct band-gaps, s…
Demonstration of critical coupling in an active III-nitride microdisk photonic circuit on silicon
Farsane Tabataba-Vakili, Laetitia Doyennette, Christelle Brimont +11
On-chip microlaser sources in the blue constitute an important building block for complex integrated photonic circuits on silicon. We have developed photonic circuits operating in…
III-nitride on silicon electrically injected microrings for nanophotonic circuits
Farsane Tabataba-Vakili, Stéphanie Rennesson, Benjamin Damilano +14
Nanophotonic circuits using group III-nitrides on silicon are still lacking one key component: efficient electrical injection. In this paper we demonstrate an electrical injection…
Blue Microlasers Integrated on a Photonic Platform on Silicon
Farsane Tabataba-Vakili, Laetitia Doyennette, Christelle Brimont +12
The main interest of group-III-nitride nanophotonic circuits is the integration of active structures and laser sources. A photonic platform of group-III-nitride microdisk lasers in…
Q factor limitation at short wavelength (around 300 nm) in III-nitride-on-silicon photonic crystal cavities
Farsane Tabataba-Vakili, Iannis Roland, Thi-Mo Tran +10
III-nitride-on-silicon L3 photonic crystal cavities with resonances down to 315 nm and quality factors (Q) up to 1085 at 337 nm have been demonstrated. The reduction of the quality…