High Q micro-ring resonators fabricated from polycrystalline aluminum nitride films for near infrared and visible photonics

Abstract

We demonstrate wideband integrated photonic circuits in sputter-deposited aluminum nitride (AlN) thin films. At both near-infrared and visible wavelengths, we achieve low propagation loss in integrated waveguides and realize high-quality optical resonators. In the telecoms C-band (1520-1580 nm), we obtain the highest optical Q factor of 440,000. Critical coupled devices show extinction ratio above 30 dB. For visible wavelengths (around 770 nm), intrinsic quality factors in excess of 30,000 is demonstrated. Our work illustrates the potential of AlN as a low loss material for wideband optical applications.

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• Octave-spanning frequency comb generation in a silicon nitride chip
• Damping of Nanomechanical Resonators
• High quality mechanical and optical properties of commercial silicon nitride membranes
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Cited by in corpus (7)

• Aluminum nitride as a new material for chip-scale optomechanics and nonlinear optics
• Blue Microlasers Integrated on a Photonic Platform on Silicon
• III-nitride on silicon electrically injected microrings for nanophotonic circuits
• On-chip ultra-compact hexagonal boron nitride topological ring-resonator in visible region
• Single photon emission and single spin coherence of a nitrogen vacancy centre encapsulated in silicon nitride
• Demonstration of critical coupling in an active III-nitride microdisk photonic circuit on silicon
• Sputtered AlN buffer layer for low-loss crystalline AlN-on-sapphire integrated photonics