activity
20192026
most citedDoping-control of excitons and magnetism in few-layer CrSBr

59 citations · 238 across the 11 of their papers we have counts for

collaborators

12 papers

cond-mat.mes-hall2026

Optimizing strong light-matter coupling of plasmonic lattices and monolayer semiconductors

Lukas Krelle, Lukas Husel, Kenji Watanabe +4

Exciton-polaritons provide a versatile platform for the study of a wide range of phenomena, including polariton lasers, topological polaritons, and bosonic condensation. Transition…

cond-mat.mes-hall2025

Cavity-mediated exciton hopping in a dielectrically engineered polariton system

Lukas Husel, Farsane Tabataba-Vakili, Johannes Scherzer +7

Exciton-polaritons - coherently hybridized states of excitons and photons - are instrumental for solid-state nonlinear optics and quantum simulations. To enable engineered polarito…

cond-mat.mes-hall2024★ 6 cited

Excitons and trions in CrSBr bilayers

M. A. Semina, F. Tabataba-Vakili, A. Rupp +3

We study theoretically the neutral and charged excitons in two-dimensional semiconductors with anisotropic dispersion of charge carriers. Such a situation is realized in CrSBr-base…

physics.optics2024

Metasurface of strongly coupled excitons and nanoplasmonic arrays

Farsane Tabataba-Vakili, Lukas Krelle, Lukas Husel +6

Metasurfaces allow to manipulate light at the nanoscale. Integrating metasurfaces with transition metal dichalcogenide monolayers provides additional functionality to ultrathin opt…

cond-mat.mes-hall2023★ 59 cited

Doping-control of excitons and magnetism in few-layer CrSBr

Farsane Tabataba-Vakili, Huy P. G. Nguyen, Anna Rupp +9

Magnetism in two-dimensional materials reveals phenomena distinct from bulk magnetic crystals, with sensitivity to charge doping and electric fields in monolayer and bilayer van de…

cond-mat.mes-hall2022★ 18 cited

Lattice reconstruction in MoSe-WSe heterobilayers synthesized by chemical vapor deposition

Zhijie Li, Farsane Tabataba-Vakili, Shen Zhao +11

Vertical van der Waals heterostructures of semiconducting transition metal dichalcogenides realize moiré systems with rich correlated electron phases and moiré exciton phenomena. F…

physics.app-ph2020★ 30 cited

Analysis of low-threshold optically pumped III-nitride microdisk lasers

Farsane Tabataba-Vakili, Christelle Brimont, Blandine Alloing +11

Low-threshold lasing under pulsed optical pumping is demonstrated at room temperature for III-nitride microdisks with InGaN/GaN quantum wells on Si in the blue spectral range. Thre…

physics.app-ph2020★ 24 cited

Monolithic integration of ultraviolet microdisk lasers into photonic circuits in a III-nitride-on-silicon platform

Farsane Tabataba-Vakili, Blandine Alloing, Benjamin Damilano +12

Ultraviolet microdisk lasers are integrated monolithically into photonic circuits using a III-nitride on silicon platform with gallium nitride (GaN) as the main waveguiding layer.…

physics.app-ph2019★ 20 cited

Demonstration of critical coupling in an active III-nitride microdisk photonic circuit on silicon

Farsane Tabataba-Vakili, Laetitia Doyennette, Christelle Brimont +11

On-chip microlaser sources in the blue constitute an important building block for complex integrated photonic circuits on silicon. We have developed photonic circuits operating in…

physics.app-ph2019★ 23 cited

III-nitride on silicon electrically injected microrings for nanophotonic circuits

Farsane Tabataba-Vakili, Stéphanie Rennesson, Benjamin Damilano +14

Nanophotonic circuits using group III-nitrides on silicon are still lacking one key component: efficient electrical injection. In this paper we demonstrate an electrical injection…

physics.app-ph2019★ 49 cited

Blue Microlasers Integrated on a Photonic Platform on Silicon

Farsane Tabataba-Vakili, Laetitia Doyennette, Christelle Brimont +12

The main interest of group-III-nitride nanophotonic circuits is the integration of active structures and laser sources. A photonic platform of group-III-nitride microdisk lasers in…

physics.app-ph2019★ 9 cited

Q factor limitation at short wavelength (around 300 nm) in III-nitride-on-silicon photonic crystal cavities

Farsane Tabataba-Vakili, Iannis Roland, Thi-Mo Tran +10

III-nitride-on-silicon L3 photonic crystal cavities with resonances down to 315 nm and quality factors (Q) up to 1085 at 337 nm have been demonstrated. The reduction of the quality…