Monolithic integration of ultraviolet microdisk lasers into photonic circuits in a III-nitride-on-silicon platform

Abstract

Ultraviolet microdisk lasers are integrated monolithically into photonic circuits using a III-nitride on silicon platform with gallium nitride (GaN) as the main waveguiding layer. The photonic circuits consist of a microdisk and a pulley waveguide terminated by out-coupling gratings. We measure quality factors up to 3500 under continuous-wave excitation. Lasing is observed from 374 nm to 399 nm under pulsed excitation, achieving low threshold energies of $0.14{\text{mJ/cm}}^2$ per pulse (threshold peak powers of $35{\text{kW/cm}}^2$). A large peak to background dynamic of around 200 is observed at the out-coupling grating for small gaps of 50 nm between the disk and waveguide. These devices operate at the limit of what can be achieved with GaN in terms of operation wavelength.

References in corpus (6)

• Low-loss integrated photonics for the blue and ultraviolet regime
• Ultra-high-Q UV microring resonators based on single-crystalline AlN platform
• High quality factor nitride-based optical cavities: microdisks with embedded GaN/Al(Ga)N quantum dots
• Blue Microlasers Integrated on a Photonic Platform on Silicon
• III-nitride on silicon electrically injected microrings for nanophotonic circuits
• Demonstration of critical coupling in an active III-nitride microdisk photonic circuit on silicon

Cited by in corpus (1)

• Analysis of low-threshold optically pumped III-nitride microdisk lasers