most citedReduced lasing thresholds in GeSn microdisk cavities with defect management of the optically active region

65 citations · 167 across the 5 of their papers we have counts for

collaborators

6 papers

physics.optics202065 cited

Reduced lasing thresholds in GeSn microdisk cavities with defect management of the optically active region

Anas Elbaz, Riazul Arefin, Emilie Sakat +20

GeSn alloys are nowadays considered as the most promising materials to build Group IV laser sources on silicon (Si) in a full complementary metal oxide semiconductor-compatible app…

physics.app-ph202024 cited

Monolithic integration of ultraviolet microdisk lasers into photonic circuits in a III-nitride-on-silicon platform

Farsane Tabataba-Vakili, Blandine Alloing, Benjamin Damilano +12

Ultraviolet microdisk lasers are integrated monolithically into photonic circuits using a III-nitride on silicon platform with gallium nitride (GaN) as the main waveguiding layer.…

physics.app-ph2020

Ultra-low threshold cw and pulsed lasing in tensile strained GeSn alloys

A. Elbaz, D. Buca, N. Von den Driesch +15

GeSn alloys are the most promising semiconductors for light emitters entirely based on group IV elements. Alloys containing more than 8 at.% Sn have fundamental direct band-gaps, s…

physics.app-ph201920 cited

Demonstration of critical coupling in an active III-nitride microdisk photonic circuit on silicon

Farsane Tabataba-Vakili, Laetitia Doyennette, Christelle Brimont +11

On-chip microlaser sources in the blue constitute an important building block for complex integrated photonic circuits on silicon. We have developed photonic circuits operating in…

physics.app-ph201949 cited

Blue Microlasers Integrated on a Photonic Platform on Silicon

Farsane Tabataba-Vakili, Laetitia Doyennette, Christelle Brimont +12

The main interest of group-III-nitride nanophotonic circuits is the integration of active structures and laser sources. A photonic platform of group-III-nitride microdisk lasers in…

physics.app-ph20199 cited

Q factor limitation at short wavelength (around 300 nm) in III-nitride-on-silicon photonic crystal cavities

Farsane Tabataba-Vakili, Iannis Roland, Thi-Mo Tran +10

III-nitride-on-silicon L3 photonic crystal cavities with resonances down to 315 nm and quality factors (Q) up to 1085 at 337 nm have been demonstrated. The reduction of the quality…