Ridge polariton laser: different from a semiconductor edge-emitting laser

Abstract

We experimentally demonstrate the difference between a ridge polariton laser, and a conventional edge-emitting ridge laser operating under electron-hole population inversion. The horizontal laser cavities are 20 -- 60 $\mu$m long GaN etched ridge structures with vertical Bragg reflectors. We investigate the laser threshold under optical pumping and assess quantitatively the effect of a varying optically-pumped length. The laser effect is achieved for an exciton reservoir length of just 15% of the cavity length, which would not be possible in a conventional ridge laser, with an inversion-less polaritonic gain about 10 times larger than in equivalent GaN lasers. The modelling of the cavity free spectral range demonstrates the polaritonic nature of the modes.

References in corpus (5)

• Bose-Einstein condensation of photons in an optical microcavity
• Polariton laser using single micropillar GaAs-GaAlAs semiconductor cavities
• Propagating Polaritons in III-Nitride Slab Waveguides
• Optical amplifier based on guided polaritons in GaN and ZnO
• Crossover from exciton-polariton condensation to photon lasing in an optical trap

Cited by in corpus (5)

• Deterministic entangling gates with nonlinear quantum photonic interferometers
• Mode-locked GaN waveguide polariton laser
• Design of a room-temperature topological exciton-polariton laser in a ZnO/TiO${}_2$-photonic crystal slab
• Lasing in a ZnO waveguide: clear evidence of polaritonic gain obtained by monitoring the continuous exciton screening
• Time-resolved dynamics of GaN waveguide polaritons