60 citations · 111 across the 5 of their papers we have counts for
5 papers
Antiphase boundaries in III-V semiconductors: Atomic configurations, band structures and Fermi levels
L. Chen, L. Pedesseau, Y. Léger +3
Here, we comprehensively investigate the atomic structures and electronic properties of different antiphase boundaries in III-V semiconductors with different orientations and stoic…
Assessment of GaPSb/Si tandem material association properties for photoelectrochemical cells
Lipin Chen, Mahdi Alqahtani, Christophe Levallois +12
Here, the structural, electronic and optical properties of the GaP1-xSbx/Si tandem materials association are determined in view of its use for solar water splitting applications. T…
Zinc-Blende group III-V/group IV epitaxy: importance of the miscut
C. Cornet, S. Charbonnier, I. Lucci +15
Here, we clarify the central role of the miscut during group III-V/ group IV crystal growth. We show that the miscut first impacts the initial antiphase domain distribution, with t…
A universal description of III-V/Si epitaxial growth processes
I. Lucci, S. Charbonnier, L. Pedesseau +15
Here, we experimentally and theoretically clarify III-V/Si crystal growth processes. Atomically-resolved microscopy shows that mono-domain 3D islands are observed at the early stag…
Shape control of QDs studied by cross-sectional scanning tunneling microscopy
J. G. Keizer, M. Bozkurt, J. Bocquel +12
In this cross-sectional scanning tunneling microscopy study we investigated various techniques to control the shape of self-assembled quantum dots (QDs) and wetting layers (WLs). T…