3 papers
physics.app-ph2020
Assessment of GaPSb/Si tandem material association properties for photoelectrochemical cells
Lipin Chen, Mahdi Alqahtani, Christophe Levallois +12
Here, the structural, electronic and optical properties of the GaP1-xSbx/Si tandem materials association are determined in view of its use for solar water splitting applications. T…
cond-mat.mtrl-sci2020
Zinc-Blende group III-V/group IV epitaxy: importance of the miscut
C. Cornet, S. Charbonnier, I. Lucci +15
Here, we clarify the central role of the miscut during group III-V/ group IV crystal growth. We show that the miscut first impacts the initial antiphase domain distribution, with t…
cond-mat.mtrl-sci2018
A universal description of III-V/Si epitaxial growth processes
I. Lucci, S. Charbonnier, L. Pedesseau +15
Here, we experimentally and theoretically clarify III-V/Si crystal growth processes. Atomically-resolved microscopy shows that mono-domain 3D islands are observed at the early stag…