Highly Ordered Boron Nitride/Epigraphene Epitaxial Films on Silicon Carbide by Lateral Epitaxial Deposition
arXiv:2011.11184 · doi:10.1021/acsnano.0c04164
Abstract
Realizing high-performance nanoelectronics requires control of materials at the nanoscale. Methods to produce high quality epitaxial graphene (EG) nanostructures on silicon carbide are known. The next step is to grow Van der Waals semiconductors on top of EG nanostructures. Hexagonal boron nitride (h-BN) is a wide bandgap semiconductor with a honeycomb lattice structure that matches that of graphene, making it ideally suited for graphene-based nanoelectronics. Here, we describe the preparation and characterization of multilayer h-BN grown epitaxially on EG using a migration-enhanced metalorganic vapor phase epitaxy process. As a result of the lateral epitaxial deposition (LED) mechanism, the grown h-BN/EG heterostructures have highly ordered epitaxial interfaces, as desired in order to preserve the transport properties of pristine graphene. Atomic scale structural and energetic details of the observed row-by-row, growth mechanism of the 2D epitaxial h-BN film are analyzed through first-principles simulations, demonstrating one-dimensional nucleation-free-energy-barrierless growth. This industrially relevant LED process can be applied to a wide variety of van der Waals materials.
References in corpus (15)
- Boron nitride substrates for high-quality graphene electronics
- Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics
- Electronic transport in two dimensional graphene
- Intrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2
- Cloning of Dirac fermions in graphene superlattices
- Quasi-free Standing Epitaxial Graphene on SiC by Hydrogen Intercalation
- Large-Area Aiming Synthesis of WSe2 Monolayers
- Cleaning Interfaces in Layered Materials Heterostructures
- Large area and structured epitaxial graphene produced by confinement controlled sublimation of silicon carbide
- Tuning the Electronic Structure of Monolayer Graphene/MoS2 van der Waals Heterostructures via Interlayer Twist
- Van der Waals epitaxy of two-dimensional single-layer h-BN on graphite by molecular beam epitaxy: Electronic properties and band structure
- Rapid and catalyst-free CVD growth of graphene on hBN
- Formation of hexagonal Boron Nitride on Graphene-covered Copper Surfaces
- Epigraphene : epitaxial graphene on silicon carbide
- Interlayer Transport through a Graphene / Rotated-Boron-Nitride / Graphene Heterostructure