32 citations · 32 across the 3 of their papers we have counts for
3 papers
Highly Ordered Boron Nitride/Epigraphene Epitaxial Films on Silicon Carbide by Lateral Epitaxial Deposition
James Gigliotti, Xin Li, Suresh Sundaram +14
Realizing high-performance nanoelectronics requires control of materials at the nanoscale. Methods to produce high quality epitaxial graphene (EG) nanostructures on silicon carbide…
Conduction and valence band offsets of Ga2O3/h-BN heterojunction
Kuang-Hui Li, Carlos G. Torres-Castanedo, Suresh Sundaram +5
h-BN and Ga2O3 are two promising semiconductor materials. However, the band alignment of the Ga2O3/h-BN heterojunction has not been identified, hindering device development. In thi…
Nano selective area growth of GaN by MOVPE on 4H-SiC using epitaxial graphene as a mask: towards integrated III-nitride / graphene / SiC electronics and optoelectronics
Renaud Puybaret, Gilles Patriarche, Matthew B. Jordan +7
We report the growth of high-quality triangular GaN nanomesas, 30-nm thick, on the C-face of 4H-SiC using nano selective area growth (NSAG) with patterned epitaxial graphene grown…