Tuning the Electronic Structure of Monolayer Graphene/MoS2 van der Waals Heterostructures via Interlayer Twist
arXiv:1510.00690 · doi:10.1103/PhysRevB.92.201409
Abstract
We directly measure the electronic structure of twisted graphene/MoS2 van der Waals heterostructures, in which both graphene and MoS2 are monolayers. We use cathode lens microscopy and microprobe angle-resolved photoemission spectroscopy measurements to image the surface, determine twist angle, and map the electronic structure of these artificial heterostructures. For monolayer graphene on monolayer MoS2, the resulting band structure reveals the absence of hybridization between the graphene and MoS2 electronic states. Further, the graphene-derived electronic structure in the heterostructures remains intact, irrespective of the twist angle between the two materials. In contrast, however, the electronic structure associated with the MoS2 layer is found to be twist-angle dependent; in particular, the relative difference in the energy of the valence band maximum at Γ and K of the MoS2 layer varies from approximately 0 to 0.2 eV. Our results suggest that monolayer MoS2 within the heterostructure becomes predominantly an indirect bandgap system for all twist angles except in the proximity of 30 degrees. This result enables potential bandgap engineering in van der Waals heterostructures comprised of monolayer structures.
arXiv comment20 pages including supplementary materials
References in corpus (19)
- The electronic properties of graphene
- Atomically thin MoS2: A new direct-gap semiconductor
- Van der Waals heterostructures
- Ultrahigh electron mobility in suspended graphene
- Field-effect tunneling transistor based on vertical graphene heterostructures
- Graphene photodetectors for high-speed optical communications
- Atomically thin p-n junctions with van der Waals heterointerfaces
- Ultrafast Charge Transfer in Atomically Thin MoS2/WS2 Heterostructures
- Grains and grain boundaries in highly crystalline monolayer molybdenum disulfide
- Hofstadter's butterfly in moire superlattices: A fractal quantum Hall effect
- Vertical Field Effect Transistor based on Graphene-WS2 Heterostructures for flexible and transparent electronics
- Massive Dirac fermions and Hofstadter butterfly in a van der Waals heterostructure
- Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2
- Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides
- Nonvolatile Memory Cells Based on MoS2/Graphene Heterostructures
- Tight-binding model and direct-gap/indirect-gap transition in single-layer and multi-layer MoS
- A precise method for visualizing dispersive features in image plots
- Characterization of graphene through anisotropy of constant-energy maps in angle-resolved photoemission
- Spectro-microscopy of single and multi-layer graphene supported by a weakly interacting substrate
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- Highly Ordered Boron Nitride/Epigraphene Epitaxial Films on Silicon Carbide by Lateral Epitaxial Deposition
- ARPES signatures of few-layer twistronic graphenes
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- Graphene Contacts to a HfSe2/SnS2 Heterostructure
- Proximity-induced topological transition and strain-induced charge transfer in graphene/MoS2 bilayer heterostructures