activity
20142017
most citedAtomically thin p-n junctions with van der Waals heterointerfaces

2.3k citations · 2.9k across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mes-hall2017★ 1 cited

Coulomb engineering of the bandgap in 2D semiconductors

Archana Raja, Andrey Chaves, Jaeeun Yu +13

The ability to control the size of the electronic bandgap is an integral part of solid-state technology. Atomically-thin two-dimensional crystals offer a new approach for tuning th…

cond-mat.mes-hall2015★ 67 cited

Tuning the Electronic Structure of Monolayer Graphene/MoS2 van der Waals Heterostructures via Interlayer Twist

Wencan Jin, Po-Chun Yeh, Nader Zaki +9

We directly measure the electronic structure of twisted graphene/MoS2 van der Waals heterostructures, in which both graphene and MoS2 are monolayers. We use cathode lens microscopy…

cond-mat.mtrl-sci2014★ 6 cited

Multi-terminal electrical transport measurements of molybdenum disulphide using van der Waals heterostructure device platform

Xu Cui, Gwan-Hyoung Lee, Young Duck Kim +15

Atomically thin two-dimensional (2D) semiconductors such as molybdenum disulphide (MoS2) hold great promise in electrical, optical, and mechanical devices and display novel physica…

cond-mat.mes-hall2014★ 521 cited

Valley Splitting and Polarization by the Zeeman Effect in Monolayer MoSe2

Yilei Li, Jonathan Ludwig, Tony Low +12

We have measured circularly polarized photoluminescence in monolayer MoSe2 under perpendicular magnetic fields up to 10 T. At low doping densities, the neutral and charged excitons…

cond-mat.mes-hall2014★ 2.3k cited

Atomically thin p-n junctions with van der Waals heterointerfaces

Chul-Ho Lee, Gwan-Hyoung Lee, Arend M. van der Zande +10

Semiconductor p-n junctions are essential building blocks for modern electronics and optoelectronics. In conventional semiconductors, a p-n junction produces depletion regions of f…