Atomically thin p-n junctions with van der Waals heterointerfaces

Abstract

Semiconductor p-n junctions are essential building blocks for modern electronics and optoelectronics. In conventional semiconductors, a p-n junction produces depletion regions of free charge carriers at equilibrium and built-in potentials associated with uncompensated dopant atoms. Carrier transport across the junction occurs by diffusion and drift processes defined by the spatial extent of this region. With the advent of atomically thin van der Waals (vdW) materials and their heterostructures, we are now able to realize a p-n junction at the ultimate quantum limit. In particular, vdW junctions composed of p- and n-type semiconductors each just one unit cell thick are predicted to exhibit completely different charge transport characteristics than bulk junctions. Here we report the electronic and optoelectronic characterization of atomically thin p-n heterojunctions fabricated using vdW assembly of transition metal dichalcogenides (TMDCs). Across the p-n interface, we observe gate-tuneable diode-like current rectification and photovoltaic response. We find that the tunnelling-assisted interlayer recombination of the majority carriers is responsible for the tunability of the electronic and optoelectronic processes. Sandwiching an atomic p-n junction between graphene layers enhances collection of the photoexcited carriers. The atomically scaled vdW p-n heterostructures presented here constitute the ultimate quantum limit for functional electronic and optoelectronic components.

29 pages, 3 figures in main & 10 figures in supplementary information

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• Van der Waals heterostructures
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Cited by in corpus (220)

• Observation of Long-Lived Interlayer Excitons in Monolayer MoSe2-WSe2 Heterostructures
• Light-emitting diodes by bandstructure engineering in van der Waals heterostructures
• Optical modulators with two-dimensional layered materials
• Measurement of the optical dielectric function of transition metal dichalcogenide monolayers: MoS2, MoSe2, WS2 and WSe2
• Polaritons in layered 2D materials
• Black Phosphorus-Monolayer MoS2 van der Waals Heterojunction P-N Diode
• Photocurrent generation with two-dimensional van der Waals semiconductors
• Exciton physics and device application of two-dimensional transition metal dichalcogenide semiconductors
• Ultrasensitive and broadband MoS2 photodetector driven by ferroelectrics
• Determination of band alignment in the single layer MoS2/WSe2 heterojunction
• Recent progress in the assembly of nanodevices and van der Waals heterostructures by deterministic placement of 2D materials
• Picosecond photoresponse in van der Waals heterostructures
• Moiré excitons: from programmable quantum emitter arrays to spin-orbit coupled artificial lattices
• Graphene Schottky diodes: an experimental review of the rectifying graphene/semiconductor heterojunction
• Sequential Edge-Epitaxy in 2D Lateral Heterostructures
• Van der Waals heterostructures for high-performance device applications: challenges and opportunities
• Cleaning Interfaces in Layered Materials Heterostructures
• Band Alignment of 2D Semiconductors for Designing Heterostructures with Momentum Space Matching
• Atomically Thin Resonant Tunnel Diodes built from Synthetic van der Waals Heterostructures
• Electrical control of interlayer exciton dynamics in atomically thin heterostructures
• Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 Transistors
• Quantum engineering of transistors based on 2D materials heterostructures
• Broadband Photovoltaic Detectors based on an Atomically Thin Heterostructure
• One-dimensional van der Waals heterostructures
• Esaki diodes in van der Waals heterojunctions with broken-gap energy band alignment
• Efficient Interlayer Relaxation and Transition of Excitons in Epitaxial and Non-epitaxial MoS2/WS2 Heterostructures
• Field-Effect Transistors Based on Few-Layered alpha-MoTe_2
• Graphene on transition-metal dichalcogenides: a platform for proximity spin-orbit physics and optospintronics
• Identification of excitons, trions and biexcitons in single-layer WS2
• Van der Waals Materials for Atomically-Thin Photovoltaics: Promise and Outlook
• Hybrid, Gate-Tunable, van der Waals p-n Heterojunctions from Pentacene and MoS2
• Interlayer Exciton Optoelectronics in a 2D Heterostructure p-n Junction
• Electronic Transport in Two-Dimensional Materials
• Valley excitons in two-dimensional semiconductors
• Atomically thin p-n junctions based on two-dimensional materials
• WSe2 light-emitting tunneling transistors with enhanced brightness at room temperature
• Topological mosaic in Moiré superlattices of van der Waals heterobilayers
• Photovoltaic and photothermoelectric effect in a double-gated WSe2 device
• Near-direct bandgap $WS{e}_2$/$Re{S}_2$ type-II pn heterojunction for enhanced ultrafast photodetection and high-performance photovoltaics
• Observation of charge density wave order in 1D mirror twin boundaries of single-layer MoSe2
• Evidence for Fast Interlayer Energy Transfer in MoSe2/WS2 Heterostructures
• Anomalous light cones and valley optical selection rules of interlayer excitons in twisted heterobilayers
• Thickness-Dependent Differential Reflectance Spectra of Monolayer and Few-Layer MoS2, MoSe2, WS2 and WSe2
• High Photovoltaic Quantum Efficiency in Ultrathin van der Waals Heterostructures
• Interfacial Charge Transfer Circumventing Momentum Mismatch at 2D van der Waals Heterojunctions
• Fast multicolor photodetectors based on graphene-contacted p-GaSe/n-InSe van der Waals heterostructures
• Interlayer excitons and Band Alignment in MoS${}_2$/hBN/WSe${}_2$ van der Waals Heterostructures
• High performance solar cells based on graphene-GaAs heterostructures
• Observation of interlayer phonon modes in van der Waals heterostructures
• Two-dimensional van der Waals electrical contact to monolayer MoSi${}_2$N${}_4$
• Enhanced Light-Matter Interaction in Two-Dimensional Transition Metal Dichalcogenides
• Does P-type Ohmic Contact Exist in WSe2-metal Interfaces?
• Interlayer Exciton Laser with Extended Spatial Coherence in an Atomically-Thin Heterostructure
• Interlayer coupling in commensurate and incommensurate bilayer structures of transition metal dichalcogenides
• Dynamics and efficient conversion of excitons to trions in non-uniformly strained monolayer WS${}_2$
• Near Unity Absorption in Van der Waals Semiconductors for Ultrathin Optoelectronics
• Origin and magnitude of 'designer' spin-orbit interaction in graphene on semiconducting transition metal dichalcogenides
• 2D MoS2-Graphene-based multilayer van der Waals heterostructures: Enhanced charge transfer and optical absorption, and electric-field tunable Dirac point and band gap
• Giant Zeeman splitting inducing near-unity valley polarization in van der Waals heterostructures
• Electrical tuning of layer-polarized exciton gases in WSe2 bilayers
• Design of van der Waals Interfaces for Broad-Spectrum Optoelectronics
• Investigation of Band-Offsets at Monolayer-Multilayer MoS2 Junctions by Scanning Photocurrent Microscopy
• Valley Polarization by Spin Injection in a Light-Emitting van der Waals Heterojunction
• Probing the Role of Interlayer Coupling and Coulomb Interactions on Electronic Structure in Few-Layer MoSe2 Nanostructures
• Visualizing Band Offsets and Edge States in Bilayer-Monolayer Transition Metal Dichalcogenides Lateral Heterojunction
• Immunity to Scaling in MoS2 Transistors Using Edge Contacts
• Spontaneous Polarization Induced Photovoltaic Effect In Rhombohedrally Stacked MoS${}_2$
• Enhanced Optoelectronic Response in Bilayer Lateral Heterostructures of Transition Metal Dichalcogenides
• Directional Interlayer Spin-Valley Transfer in Two-Dimensional Heterostructures
• Inter- and intra-layer excitons in MoS${}_2$/WS${}_2$ and MoSe${}_2$/WSe${}_2$ heterobilayers
• Device physics of van der Waals heterojunction solar cells
• Light matter interaction in transition metal dichalcogenides and their heterostructures
• Strong quantum confinement effect in the optical properties of ultrathin α-In2Se3
• Pronounced photovoltaic response from multi-layered transition-metal dichalcogenides PN-junctions
• Mutual Photoluminescence Quenching and Photovoltaic Effect in Large-Area Single-Layer MoS2-Polymer Heterojunctions
• Sub-Nanometer Channels Embedded in Two-Dimensional Materials
• Momentum-Resolved View of Electron-Phonon Coupling in Multilayer WSe${}_2$
• Imaging of interlayer coupling in van der Waals heterostructures using a bright-field optical microscope
• Large-area, low-voltage, anti-ambipolar heterojunctions from solution-processed semiconductors
• Gate-Tunable Semiconductor Heterojunctions from 2D/3D van der Waals Interfaces
• Optically discriminating carrier-induced quasiparticle band gap and exciton energy renormalization in monolayer MoS2
• Giant Valley-Zeeman Splitting from Spin-Singlet and Spin-Triplet Interlayer Excitons in WSe2/MoSe2 Heterostructure
• Materials properties of out-of-plane heterostructures of MoS${}_2$-WSe${}_2$ and WS${}_2$-MoSe${}_2$
• Gate-tunable diode and photovoltaic effect in an organic-2D layered material p-n junction
• Charge versus energy transfer in atomically-thin graphene-transition metal dichalcogenide van der Waals heterostructures
• Band alignment of two-dimensional lateral heterostructures
• Interlayer excitons in transition metal dichalcogenide heterostructures
• Van der Waals Ferromagnetic Josephson Junctions
• High Current Density 2D/3D Esaki Tunnel Diodes
• Gas Sensing with h-BN Capped MoS2 Heterostructure Thin Film Transistors
• Self-Aligned van der Waals Heterojunction Diodes and Transistors
• Interface Dipole and Band Bending in Hybrid p-n Heterojunction MoS2/GaN(0001)
• InSe Schottky diodes based on van der Waals contacts
• Ferroelectric Domain Patterning Controlled Schottky Junction State in Monolayer MoS${}_2$
• Wavelength-Controlled Photocurrent Polarity Switching in BP-MoS${}_2$ Heterostructure
• Photodetectors based on junctions of Two-Dimensional Transition metal dichalcogenides
• Tuning the Electronic Structure of Monolayer Graphene/MoS2 van der Waals Heterostructures via Interlayer Twist
• Gate Tunable Photovoltaic Effect in MoS2 vertical P-N Homostructures
• Electron transport through metal/MoS2 interfaces: edge- or area-dependent process?
• Rearrangement of Van-der-Waals Stacking and Formation of a Singlet State at $T=90$ K in a Cluster Magnet
• Opportunities in Electrically Tunable 2D Materials Beyond Graphene: Recent Progress and Future Outlook
• One-dimensional van der Waals Heterostructures: Growth Mechanism and Handedness Correlation Revealed by Non-destructive TEM
• Visualization of Local Conductance in MoS2/WSe2 Heterostructure Transistors
• High open-circuit voltage in transition metal dichalcogenide solar cells
• Atomic Layer MoS2-Graphene van der Waals Heterostructure Nanomechanical Resonators
• Antiferromagnet-semiconductor van der Waals heterostructures: interlayer interplay of exciton with magnetic ordering
• Atomic scale electronic structure of the ferromagnetic semiconductor Cr2Ge2Te6
• One-dimensional van der Waals heterojunction diode
• Full orientation control of epitaxial MoS2 on hBN assisted by substrate defects
• Transistor concepts based on lateral heterostructures of metallic and semiconducting phases of MoS${}_2$
• Highly Sensitive MoS2 Photodetectors with Graphene Contacts
• Quadrupolar Excitons and Hybridized Interlayer Mott Insulator in a Trilayer Moiré Superlattice
• Asymmetric Electric Field Screening in van der Waals Heterostructures
• Engineering Multiple Topological Phases in Nanoscale Van der Waals Heterostructures: Realisation of $\alpha$-Antimonene
• Interface excitons at lateral heterojunctions in monolayer semiconductors
• Electrically controlled emission from singlet and triplet exciton species in atomically thin light emitting diodes
• Dielectric Engineering of Electronic Correlations in a van der Waals Heterostructure
• Tuning Conductivity Type in Monolayer WS2 and MoS2 by Sulfur Vacancies
• Wafer-scale arrayed p-n junctions based on few-layer epitaxial GaTe
• Temperature dependence of Coulomb oscillations in a few-layer two-dimensional WS2 quantum dot
• A Gaussian Thermionic Emission Model for Analysis of Au/MoS2 Schottky Barrier Devices
• Strain-driven valley states and phase transitions in Janus VSiGeN4 monolayer
• Localized interlayer complexes in heterobilayer transition metal dichalcogenides
• Disentangling the effects of doping, strain and defects in monolayer WS2 by optical spectroscopy
• Photoresponse of atomically thin MoS2 layers and their planar heterojunctions
• Time-domain observation of interlayer exciton formation and thermalization in a MoSe${}_2$/WSe${}_2$ heterostructure
• Engineering the optoelectronic properties of MoS2 photodetectors through reversible noncovalent functionalization
• Photodetecting and Light-Emitting Devices Based on Two Dimensional Materials
• Room-temperature bipolar valleytronic transistor in MoS2/WSe2 heterostructures
• Electronic and optical excitations of two-dimensional ZrS${}_2$ and HfS${}_2$ and their heterostructure
• Nanoscale patterning of quasiparticle band alignment
• Electrical control of inter-layer excitons in van der Waals heterostructures
• Gate-tunable Photoresponse Time in BlackPhosphorus-MoS2Heterojunctions
• Semiconducting van der Waals Interfaces as Artificial Semiconductors
• Light emission from the layered metal 2H-TaSe${}_2$ and its potential applications
• Pushing Back the Limit of Ab-initio Quantum Transport Simulations on Hybrid Supercomputers
• Approaching the robust linearity in dual-floating van der Waals photodiode
• Charge Transfer Effects in Naturally Occurring van der Waals Heterostructures (PbSe)1.16(TiSe2)m (m=1, 2)
• Percolative switching in transition metal dichalcogenide field-effect transistors at room temperature
• Fast Yet Quantum-Efficient Few-Layer Vertical MoS2 Photodetectors
• Visualizing bulk and edge photocurrent flow in anisotropic Weyl semimetals
• Highly Accurate, Reliable and Non-Contaminating Two-Dimensional Material Transfer System
• Electric Field Tuning of Band Offsets in Transition Metal Dichalcogenides
• $h$-AlN-Mg(OH)${}_2$ vdW Bilayer Heterostructure: Tuning the excitonic characteristics
• Interfacial charge transfer and gate induced hysteresis in monochalcogenide InSe/GaSe heterostructures
• Electrostatics of Two-Dimensional Lateral Junctions
• Tailoring Semiconductor Lateral Multi-junctions for Giant Photoconductivity Enhancement
• Probing correlations in the exciton landscape of a moiré heterostructure
• Operating Principles of Vertical Transistors Based on Monolayer Two-Dimensional Semiconductor Heterojunctions
• Electrostatics of metal-graphene interfaces: sharp p-n junctions for electron-optical applications
• Ultrafast photocurrent and absorption microscopy of few-layer TMD devices isolate rate-limiting dynamics driving fast and efficient photoresponse
• Strong two-dimensional plasmon in Li-intercalated hexagonal boron-nitride film with low damping
• Polarization-dependent photocurrents in polar stacks of van der Waals solids
• Magnetoexcitons in transition-metal dichalcogenides monolayers, bilayers, and van der Waals heterostructures
• Growth and applications of two-dimensional single crystals
• The 2D pn Junction Driven Out-of-Equilibrium
• Graphene Contacts to a HfSe2/SnS2 Heterostructure
• Near-Infrared and Visible-range Optoelectronics in 2D Hybrid Perovskite/Transition Metal Dichalcogenide Heterostructures
• Lateral p-n Junction in an Inverted InAs/GaSb Double Quantum Well
• Phonons in MoSe2/WSe2 van der Waals heterobilayer
• The Effect of Intra-Layer Bonding on Electron-Optical Phase Images of Few-Layer WSe2
• Stability, efficiency, and mechanism of n-type doping by hydrogen adatoms in two-dimensional transition metal dichalcogenides
• Computing Optical Properties of Ultra-thin Crystals
• Measuring the local quantum capacitance of graphene using a strongly coupled graphene nanoribbon
• Interlayer Resistance of Misoriented MoS2
• Multidimensional Analysis of Excitonic Spectra of Monolayers of Tungsten Disulphide: Towards Computer Aided Identification of Structural and Environmental Perturbations of 2D Materials
• Distinct photoluminescence in multilayered van der Waals heterostructures of MoS2/WS2/ReS2 and BN
• Band tail formation in mono and multilayered transition metal dichalcogenides: A detailed assessment and a quick-reference guide
• Quadrupolar Excitons in MoSe${}_2$ Bilayers
• Synthetic Semimetals with van der Waals Interfaces
• Indirect-to-direct band gap crossover of single walled MoS${}_2$ nanotubes
• Gate-defined Two-dimensional Hole and Electron Systems in an Undoped InSb Quantum Well
• Probing excitons with time-resolved momentum microscopy
• Moiré patterns generated by stacked 2D lattices: a general algorithm to identify primitive coincidence cells
• Avalanche photodiodes based on MoS2/Si heterojunctions
• Atomically flat two-dimensional silicon crystals with versatile electronic properties
• Vertical Heterostructures between Transition-Metal Dichalcogenides -- A Theoretical Analysis of the NbS${}_2$/WSe${}_2$ junction
• UV active plasmons in alkali and alkaline earth intercalated graphene
• Exploring Low Internal Reorganization Energies for Silicene Nanoclusters
• Electrically controlled emission from triplet charged excitons in atomically thin heterostructures
• Landau Levels of Bilayer Graphene in a WSe${}_2$/Bilayer Graphene van der Waals Heterostructure
• Photodiodes based in La0.7Sr0.3MnO3/single layer MoS2 hybrid vertical heterostructures
• Magnetoexcitons in phosphorene monolayers, bilayers, and van der Waals heterostructures
• Imaging Electron Motion in a Few Layer MoS2 Device
• Second-harmonic imaging microscopy for time-resolved investigations of transition metal dichalcogenides
• Multi-terminal electrical transport measurements of molybdenum disulphide using van der Waals heterostructure device platform
• Signatures of defect-localized charged excitons in the photoluminescence of monolayer molybdenum disulfide
• Charge photogeneration in few-layer MoS2
• Drastic suppression of CDW (charge density wave) by Pd addition in TiSe2
• Charge-Transfer Hyperbolic Polaritons in $\alpha$-MoO${}_3$/graphene heterostructures
• Tuning the p-type Schottky barrier in 2D metal/semiconductor interface: boron-sheet/\mose, and /\wse
• Crystallographic orientation errors in mechanical exfoliation
• Role of Defect Induced Interfacial States in Molecular Sensing: Ultrahigh- Sensitive Region for Molecular Interaction
• Stacking up electron-rich and electron-deficient monolayers to achieve extraordinary mid- to far-infrared excitonic absorption: Interlayer excitons in the C3B/C3N bilayer
• Interface engineering of van der Waals heterostructures towards energy-efficient quantum devices operating at high temperatures
• A plausible method of preparing the ideal p-n junction interface of a thermoelectric material by surface doping
• Tuning of Interlayer Coupling in Large-Area Graphene/WSe2 van der Waals Heterostructure via Ion Irradiation: Optical Evidences and Photonic Applications
• Detecting photoelectrons from spontaneously formed excitons
• Tunable electronic energy level alignment and exciton diversity in organic-inorganic van der Waals heterostructures
• $WS{e}_2$ Monolayers Grown by Molecular Beam Epitaxy on hBN
• Wafer-scale fabrication of 2D van der Waals heterojunctions for efficient and broadband photodetection
• Towards Fast Multicolor Photodetectors based on Graphene Contacted Vertical p-GaSe/n-InSe van der Waals Heterostructure
• Winterface: An Interface from Wannier90 to Quantum Transport
• Dynamic generation of spin spirals of moiré trapped carriers via exciton mediated spin interactions
• The gate tunable 2D pn junction driven out-of-equilibrium
• The role of intrinsic atomic defects in a Janus MoSSe/XN (X = Al, Ga) heterostructure: a first principles study
• Optically Active Quantum Dots in Monolayer WSe${}_2$
• Ultrahigh Responsivity Photodetectors of Two-dimensional Covalent Organic Frameworks Integrated on Graphene
• Negative Photoconductance in van der Waals Heterostructures-Based Floating Gate Phototransistor
• Energy dissipation mechanism revealed by spatially resolved Raman thermometry of graphene/hexagonal boron nitride heterostructure devices
• Angular Emission Properties of Strained Transition-Metal Dichalcogenides
• Observation of the Interlayer Exciton Gases in WSe${}_2$ -p: WSe${}_2$ Heterostructures
• Covalent-bonding-induced strong phonon scattering in the atomically thin WSe2 layer
• Spatially controlled electrostatic doping in graphene p-i-n junction for hybrid silicon photodiode
• Stacking enabled strong coupling of atomic motion to interlayer excitons in van der Waals heterojunction photodiodes
• Dipole-containing encapsulation on WSe2/MoS2 nanoflake p-n diode with glass substrate toward an ideal performance
• Vertically-oriented MoS${}_2$ nanosheets for nonlinear optical devices
• High yield production of ultrathin fibroid semiconducting nanowire of Ta${}_2$Pd${}_3$Se${}_8$
• $\mathring{A}$-Indentation for non-destructive elastic moduli measurements of supported ultra-hard ultra-thin films and nanostructures
• Diabatic Hamiltonian Construction in van der Waals heterostructure complexes