Atomic scale electronic structure of the ferromagnetic semiconductor Cr2Ge2Te6
arXiv:1905.02444 · doi:10.1016/j.scib.2018.05.034
Abstract
Cr2Ge2Te6 is an intrinsic ferromagnetic semiconductor with van der Waals type layered structure, thus represents a promising material for novel electronic and spintronic devices. Here we combine scanning tunneling microscopy and first-principles calculations to investigate the electronic structure of Cr2Ge2Te6. Tunneling spectroscopy reveals a surprising large energy level shift and change of energy gap size across the ferromagnetic to paramagnetic phase transition, as well as a peculiar double-peak electronic state on the Cr-site defect. These features can be quantitatively explained by density functional theory calculations, which uncover a close relationship between the electronic structure and magnetic order. These findings shed important new lights on the microscopic electronic structure and origin of magnetic order in Cr2Ge2Te6.
arXiv comment16 pages, 4 figures
References in corpus (15)
- Atomically thin MoS2: A new direct-gap semiconductor
- Discovery of intrinsic ferromagnetism in 2D van der Waals crystals
- Atomically thin p-n junctions with van der Waals heterointerfaces
- Electrically Tunable Excitonic Light Emitting Diodes based on Monolayer WSe2 p-n Junctions
- Titanic Magnetoresistance in WTe2
- Superconductivity in Cu_xTiSe_2
- Dilute ferromagnetic semiconductors: Physics and spintronic structures
- Ferromagnetic Semiconductors: Moving Beyond (Ga,Mn)As
- Magnetic ground state of semiconducting transition metal trichalcogenide monolayers
- Electric Field Effect in Multilayer Cr2Ge2Te6: a Ferromagnetic Two-Dimensional Material
- Tricritical behavior of two-dimensional intrinsic ferromagnetic semiconducting CrGeTe3
- Magnetic anisotropy of the single-crystalline ferromagnetic insulator Cr2Ge2Te6
- Visualizing the atomic scale electronic structure of the Ca2CuO2Cl2 Mott insulator
- Dielectric properties and dynamical conductivity of LaTiO3: From dc to optical frequencies
- Optical response of ferromagnetic YTiO_3 studied by spectral ellipsometry
Cited by in corpus (13)
- A family of high-temperature ferromagnetic monolayers with locked spin-dichroism-mobility anisotropy: MnNX and CrCX (X=Cl, Br, I; C=S, Se, Te)
- Spin Dynamics in van der Waals Magnetic Systems
- Ultrafast enhancement of ferromagnetic spin exchange induced by ligand-to-metal charge transfer
- Role of non-locality in exchange-correlation for magnetic 2D van der Waals materials
- Manipulation of magnetic topological textures via perpendicular strain and polarization in van der Waals magnetoelectric heterostructure
- Enhanced Curie temperature and skyrmion stability in room temperature ferromagnetic semiconductor CrISe monolayer
- Short-range Crystalline Order-Tuned Conductivity in CrSiTe van der Waals Magnetic Crystals
- Polaronic Conductivity in CrGeTe Single Crystals
- Spin filtering effect in intrinsic 2D magnetic semiconductor Cr2Ge2Te6
- Magnetoelectric imprint of skyrmions in van der Waals bilayers
- Mechanical control of physical properties in the van der Waals ferromagnet Cr2Ge2Te6 via application of electric current
- Magnetoelectric torque in polar magnetic bilayers
- Electrically modulated light-emitting diodes driven by resonant and antiresonant tunneling between CrGeTe electrodes