Ferromagnetic Semiconductors: Moving Beyond (Ga,Mn)As

Abstract

The recent development of MBE techniques for growth of III-V ferromagnetic semiconductors has created materials with exceptional promise in spintronics, i.e. electronics that exploit carrier spin polarization. Among the most carefully studied of these materials is (Ga,Mn)As, in which meticulous optimization of growth techniques has led to reproducible materials properties and ferromagnetic transition temperatures well above 150 K. We review progress in the understanding of this particular material and efforts to address ferromagnetic semiconductors as a class. We then discuss proposals for how these materials might find applications in spintronics. Finally, we propose criteria that can be used to judge the potential utility of newly discovered ferromagnetic semiconductors, and we suggest guidelines that may be helpful in shaping the search for the ideal material.

37 pages, 4 figures

References in corpus (3)

• Ellipsometric study of the Electronic Structure of GaMnAs and LT-GaAs
• Tunable spin polarization in III-V quantum wells with a ferromagnetic barrier
• Ferromagnetic (Ga,Mn)N epilayers versus antiferromagnetic GaMn${}_3$N clusters

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