Nanoscale spin-polarization in dilute magnetic semiconductor (In,Mn)Sb
arXiv:0801.1464 · doi:10.1103/PhysRevB.77.233304
Abstract
Results of point contact Andreev reflection (PCAR) experiments on (In,Mn)Sb are presented and analyzed in terms of current models of charge conversion at a superconductor-ferromagnet interface. We investigate the influence of surface transparency, and study the crossover from ballistic to diffusive transport regime as contact size is varied. Application of a Nb tip to a (In,Mn)Sb sample with Curie temperature Tc of 5.4 K allowed the determination of spin-polarization when the ferromagnetic phase transition temperature is crossed. We find a striking difference between the temperature dependence of the local spin polarization and of the macroscopic magnetization, and demonstrate that nanoscale clusters with magnetization close to the saturated value are present even well above the magnetic phase transition temperature.
4 pages
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Cited by in corpus (8)
- Dilute ferromagnetic semiconductors: Physics and spintronic structures
- Spin polarization of (Ga,Mn)As measured by Andreev Spectroscopy: The role of spin-active scattering
- GHz Operation of Nanometer-Scale Metallic Memristors: Highly Transparent Conductance Channels in AgS Devices
- Unconventional ferromagnetism and transport properties of (In,Mn)Sb dilute magnetic semiconductor
- Kondo effect and spin-active scattering in ferromagnet-superconductor junctions
- Andreev bound states in superconductor/ferromagnet point contact Andreev reflection spectra
- Effect of transport-induced charge inhomogeneity on point-contact Andreev reflection spectra at ferromagnet-superconductor interfaces
- Transition from coherent mesoscopic single particle transport to proximity Josephson-current