Growth and properties of ferromagnetic In(1-x)Mn(x)Sb alloys

Abstract

We discuss a new narrow-gap ferromagnetic (FM) semiconductor alloy, In(1-x)Mn(x)Sb, and its growth by low-temperature molecular-beam epitaxy. The magnetic properties were investigated by direct magnetization measurements, electrical transport, magnetic circular dichroism, and the magneto-optical Kerr effect. These data clearly indicate that In(1-x)Mn(x)Sb possesses all the attributes of a system with carrier-mediated FM interactions, including well-defined hysteresis loops, a cusp in the temperature dependence of the resistivity, strong negative magnetoresistance, and a large anomalous Hall effect. The Curie temperatures in samples investigated thus far range up to 8.5 K, which are consistent with a mean-field-theory simulation of the carrier-induced ferromagnetism based on the 8-band effective band-orbital method.

arXiv commentInvited talk at 11th International Conference on Narrow Gap Semiconductors, Buffalo, New York, U.S.A., June 16 - 20, 2003

References in corpus (6)

• Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors
• Anomalous Hall effect in ferromagnetic semiconductors
• Ferromagnetic semiconductors
• Spin interactions of interstitial Mn ions in ferromagnetic GaMnAs
• Curie Temperature Trends in (III,Mn)V Ferromagnetic Semiconductors
• Fundamental Curie temperature limit in ferromagnetic GaMnAs

Cited by in corpus (5)

• Magnetic scattering of spin polarized carriers in (In,Mn)Sb dilute magnetic semiconductor
• Anomalous Hall effect in (In,Mn)Sb dilute magnetic semiconductor
• Measurement of Spin Polarization by Andreev Reflection in Ferromagnetic In1-xMnxSb Epilayers
• Nanoscale spin-polarization in dilute magnetic semiconductor (In,Mn)Sb
• Transition from coherent mesoscopic single particle transport to proximity Josephson-current