36 citations · 36 across the 1 of their papers we have counts for
10 papers
Metal-insulator transition by isovalent anion substitution in Ga1-xMnxAs: Implications to ferromagnetism
P. R. Stone, K. Alberi, S. K. Z. Tardif +4
We have investigated the effect of partial isovalent anion substitution in Ga1-xMnxAs on electrical transport and ferromagnetism. Substitution of only 2.4% of As by P induces a met…
Fabrication of GaNxAs1-x Quantum Structures by Focused Ion Beam Patterning
K. Alberi, A. Minor, M. A. Scarpulla +5
A novel approach to the fabrication of GaNxAs1-x quantum dots and wires via ion beam patterning is presented. Photomodulated reflectance spectra confirm that N can be released from…
Carrier Concentration Dependencies of Magnetization & Transport in Ga1-xMnxAs1-yTey
M. A. Scarpulla, K. M. Yu, W. Walukiewicz +1
We have investigated the transport and magnetization characteristics of Ga1-xMnxAs intentionally compensated with shallow Te donors. Using ion implantation followed by pulsed-laser…
Diluted II-VI Oxide Semiconductors with Multiple Band Gaps
K. M. Yu, W. Walukiewicz, J. Wu +5
We report the realization of a new multi-band-gap semiconductor. The highly mismatched alloy Zn1-yMnyOxTe1-x has been synthesized using the combination of oxygen ion implantation a…
Growth and properties of ferromagnetic In(1-x)Mn(x)Sb alloys
T. Wojtowicz, W. L. Lim, X. Liu +15
We discuss a new narrow-gap ferromagnetic (FM) semiconductor alloy, In(1-x)Mn(x)Sb, and its growth by low-temperature molecular-beam epitaxy. The magnetic properties were investiga…
Enhancement of Curie temperature in Ga(1-x)Mn(x)As/Ga(1-y)Al(y)As ferromagnetic heterostructures by Be modulation doping
T. Wojtowicz, W. L. Lim, X. Liu +6
The effect of modulation doping by Be on the ferromagnetic properties of Ga(1-x)Mn(x)As is investigated in Ga(1-x)Mn(x)As/Ga(1-y)Al(y)As heterojunctions and quantum wells. Introduc…