High-Temperature Hall Effect in Ga(1-x)Mn(x)As

Abstract

The temperature dependence of the Hall coefficient of a series of ferromagnetic Ga(1-x)Mn(x)As samples is measured in the temperature range 80K < T < 500K. We model the Hall coefficient assuming a magnetic susceptibility given by the Curie-Weiss law, a spontaneous Hall coefficient proportional to rho_xx^2(T), and including a constant diamagnetic contribution in the susceptibility. For all low resistivity samples this model provides excellent fits to the measured data up to T=380K and allows extraction of the hole concentration (p). The calculated p are compared to alternative methods of determining hole densities in these materials: pulsed high magnetic field (up to 55 Tesla) technique at low temperatures (less than the Curie temperature), and electrochemical capacitance- voltage profiling. We find that the Anomalous Hall Effect (AHE) contribution to rho_xy is substantial even well above the Curie temperature. Measurements of the Hall effect in this temperature regime can be used as a testing ground for theoretical descriptions of transport in these materials. We find that our data are consistent with recently published theories of the AHE, but they are inconsistent with theoretical models previously used to describe the AHE in conventional magnetic materials.

6 pages, 5 figures, 1 table. Accepted to Phys.Rev.B

References in corpus (10)

• Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors
• Anomalous Hall effect in ferromagnetic semiconductors
• Effects of Disorder on Ferromagnetism in Diluted Magnetic Semiconductors
• Effects of annealing time on defect-controlled ferromagnetism in Ga1-xMnxAs
• High Curie temperature GaMnAs obtained by resistance-monitored annealing
• Temperature-dependent magnetization in diluted magnetic semiconductors
• Magnetotransport properties of (Ga,Mn)As investigated at low temperature and high magnetic field
• Anisotropic Magnetoresistance in Ga${}_{1-x}$Mn${}_x$As
• DC-transport properties of ferromagnetic (Ga,Mn)As semiconductors
• Spectroscopic determination of hole density in the ferromagnetic semiconductor Ga${}_{1-x}$Mn${}_x$As

Cited by in corpus (18)

• Anomalous Hall effect
• Spin-dependent phenomena and device concepts explored in (Ga,Mn)As
• On the character of states near the Fermi level in (Ga,Mn)As: impurity to valence band crossover
• Low temperature ferromagnetic properties of the diluted magnetic semiconductor Sb2-xCrxTe3
• Magnetic and electronic transport percolation in epitaxial GeMn films
• Perpendicular magnetization reversal, magnetic anisotropy, multi-step spin switching, and domain nucleation and expansion in Ga1-xMnxAs films
• Anisotropic magnetoresistance of spin-orbit coupled carriers scattered from polarized magnetic impurities
• Curie temperature versus hole concentration in field-effect structures of Ga1-xMnxAs
• Ferromagnetic resonance study of free hole contribution to magnetization and magnetic anisotropy in modulation-doped Ga${}_{1-x}$Mn${}_x$As/Ga${}_{1-y}$Al${}_y$As:Be
• Interplay between carrier and impurity concentrations in annealed Ga${}_{1-x}$Mn${}_x$As intrinsic anomalous Hall Effect
• Anomalous Hall effect in insulating Ga1-xMnxAs
• Electrical transport and ferromagnetism in Ga1-xMnxAs synthesized by ion implantation and pulsed-laser melting
• Scaling relation of the anomalous Hall effect in (Ga,Mn)As
• Evidence of metallic clustering in annealed Ga1-xMnxAs from atypical scaling behavior of the anomalous Hall coefficient
• Softening of Spin-Wave Stiffness near the Ferromagnetic Phase Transition in Diluted Magnetic Semiconductors
• Effect of inversion asymmetry on the intrinsic anomalous Hall effect in ferromagnetic (Ga,Mn)As
• Transport in the metallic regime of Mn doped III-V Semiconductors
• Hall conductivity in the presence of spin-orbit interaction and disorder