Perpendicular magnetization reversal, magnetic anisotropy, multi-step spin switching, and domain nucleation and expansion in Ga1-xMnxAs films

Abstract

We present a comprehensive study of the reversal process of perpendicular magnetization in thin layers of the ferromagnetic semiconductor Ga1-xMnxAs. For this investigation we have purposely chosen Ga1-xMnxAs with a low Mn concentration (x ~ 0.02), since in such specimens contributions of cubic and uniaxial anisotropy parameters are comparable, allowing us to identify the role of both types of anisotropy in the magnetic reversal process. As a first step we have systematically mapped out the angular dependence of ferromagnetic resonance in thin Ga1-xMnxAs layers, which is a highly effective tool for obtaining the magnetic anisotropy parameters of the material. The process of perpendicular magnetization reversal was then studied by magneto-transport (i.e., Hall effect and planar Hall effect measurements). These measurements enable us to observe coherent spin rotation and non-coherent spin switching between the (100) and (010) planes. A model is proposed to explain the observed multi-step spin switching. The agreement of the model with experiment indicates that it can be reliably used for determining magnetic anisotropy parameters from magneto-transport data. An interesting characteristic of perpendicular magnetization reversal in Ga1-xMnxAs with low x is the appearance of a double hysteresis loops in the magnetization data. This double-loop behavior can be understood by generalizing the proposed model to include the processes of domain nucleation and expansion.

References in corpus (16)

• Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors
• Giant Planar Hall Effect in Epitaxial (Ga,Mn)As Devices
• Theory of Magnetic Anisotropy in III_{1-x}Mn_{x}V Ferromagnets
• In-plane uniaxial anisotropy rotations in (Ga,Mn)As thin films
• Temperature Dependent Magnetic Anisotropy in (Ga,Mn)As Layers
• Temperature Dependent Magnetic Anisotropy in (Ga,Ma)As Layers
• Very large magnetoresistance in lateral ferromagnetic (Ga,Mn)As wires with nanoconstrictions
• Saturated Ferromagnetism and Magnetization Deficit in Optimally Annealed (Ga,Mn)As Epilayers
• Anisotropic Magnetoresistance in Ga${}_{1-x}$Mn${}_x$As
• Magnetic domains in III-V magnetic semiconductors
• Lattice constant variation and complex formation in zincblende Gallium Manganese Arsenide
• Magnetization switching in a Heisenberg model for small ferromagnetic particles
• Ferromagnetic resonance study of free hole contribution to magnetization and magnetic anisotropy in modulation-doped Ga${}_{1-x}$Mn${}_x$As/Ga${}_{1-y}$Al${}_y$As:Be
• Magnetic Reversal on Vicinal Surfaces
• Mixed magnetic phases in (Ga,Mn)As epilayers
• High-Temperature Hall Effect in Ga(1-x)Mn(x)As

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