High Curie temperature and perpendicular magnetic anisotropy in homoepitaxial InMnAs films
arXiv:1506.01537 · doi:10.1088/0022-3727/48/23/235002
Abstract
We have prepared the dilute magnetic semiconductor (DMS) InMnAs with different Mn concentrations by ion implantation and pulsed laser melting. The Curie temperature of the In1-xMnxAs epilayer depends on the Mn concentration x, reaching 82 K for x=0.105. The substitution of Mn ions at the Indium sites induces a compressive strain perpendicular to the InMnAs layer and a tensile strain along the in-plane direction. This gives rise to a large perpendicular magnetic anisotropy, which is often needed for the demonstration of electrical control of magnetization and for spin-transfer-torque induced magnetization reversal.
arXiv comment16 pages, 5 figures
References in corpus (17)
- Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors
- Ferromagnetism in semiconductors and oxides: prospects from a ten years' perspective
- Dilute ferromagnetic semiconductors: Physics and spintronic structures
- Velocity of domain-wall motion induced by electrical current in a ferromagnetic semiconductor (Ga,Mn)As
- Achieving High Curie Temperature in (Ga,Mn)As
- Temperature Dependent Magnetic Anisotropy in (Ga,Ma)As Layers
- Temperature Dependent Magnetic Anisotropy in (Ga,Mn)As Layers
- Ferromagnetism in Ga1-xMnxP: evidence for inter-Mn exchange mediated by localized holes within a detached impurity band
- Optical Properties of III-Mn-V Ferromagnetic Semiconductors
- Domain-wall resistance in ferromagnetic (Ga,Mn)As
- Perpendicular magnetization reversal, magnetic anisotropy, multi-step spin switching, and domain nucleation and expansion in Ga1-xMnxAs films
- Molecular Beam Epitaxy grown (Ga,Mn)(As,P) with perpendicular to plane magnetic easy axis
- Electrical transport and ferromagnetism in Ga1-xMnxAs synthesized by ion implantation and pulsed-laser melting
- Current-driven domain wall motion across a wide temperature range in a (Ga,Mn)(As,P) device
- Tuning perpendicular magnetic anisotropy in (Ga,Mn)(As,P) by thermal annealing
- Ferromagnetic InMnAs on InAs Prepared by Ion Implantation and Pulsed Laser Annealing
- Strain dependence of the Mn anisotropy in ferromagnetic semiconductors observed by x-ray magnetic circular dichroism