Ferromagnetic InMnAs on InAs Prepared by Ion Implantation and Pulsed Laser Annealing
arXiv:1209.5865 · doi:10.1143/APEX.5.093007
Abstract
Ferromagnetic InMnAs has been prepared by Mn ion implantation and pulsed laser annealing. The InMnAs layer reveals a saturated magnetization of 2.6 mu_B/Mn at 5 K and a perpendicular magnetic anisotropy. The Curie temperature is determined to be 46 K, which is higher than those in previous reports with similar Mn concentrations. Ferromagnetism is further evidenced by the large magnetic circular dichroism.
9 pages, 3 figures
Cited by in corpus (4)
- Interplay between localization and magnetism in (Ga,Mn)As and (In,Mn)As
- Ferromagnetism and impurity band in a new magnetic semiconductor: InMnP
- High Curie temperature and perpendicular magnetic anisotropy in homoepitaxial InMnAs films
- A comprehensive study of the magnetic, structural and transport properties of the III-V ferromagnetic semiconductor InMnP