Ferromagnetism and impurity band in a new magnetic semiconductor: InMnP

Abstract

We have synthesized ferromagnetic InMnP, a member of III-Mn-V ferromagnetic semiconductor family, by Mn ion implantation and pulsed laser annealing. Clear ferromagnetic hysteresis loops and a perpendicular magnetic anisotropy are observed up to a Curie temperature of 42 K. Large values of negative magnetoresistance and magnetic circular dichroism as well as anomalous Hall effect are further evidences of a ferromagnetic order in InMnP. An effort is made to understand the transport mechanism in InMnP using the theoretical models. We find that the valence band of InP does not merge with the impurity band of the heavily doped ferromagnetic InMnP. Our results suggest that impurity band conduction is a characteristic of Mn-doped III-V semiconductors which have deep Mn-acceptor levels.

arXiv comment12 pages, 5 figures

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Cited by in corpus (5)

• Precise tuning of the Curie temperature of (Ga,Mn)As-based magnetic semiconductors by hole compensation: Support for valence-band ferromagnetism
• Bandgap narrowing in Mn doped GaAs probed by room-temperature photoluminescence
• Carrier induced ferromagnetism in the insulating Mn doped III-V semiconductor InP
• Investigation of a possible electronic phase separation in the magnetic semiconductors Ga${}_{1-x}$Mn${}_x$As and Ga${}_{1-x}$Mn${}_x$P by means of fluctuation spectroscopy
• A comprehensive study of the magnetic, structural and transport properties of the III-V ferromagnetic semiconductor InMnP