Weak localization in GaMnAs: evidence of impurity band transport

Abstract

We report the observation of negative magnetoresistance in the ferromagnetic semiconductor GaMnAs at low temperatures ($T<3$ K) and low magnetic fields ($0<B<20$ mT). We attribute this effect to weak localization. Observation of weak localization provides a strong evidence of impurity band transport in these materials, since for valence band transport one expects either weak anti-localization due to strong spin-orbit interactions or total suppression of interference by intrinsic magnetization. In addition to the weak localization, we observe Altshuler-Aronov electron-electron interactions effect in this material.

5 pages, 4 figure

References in corpus (2)

• Impurity Band Conduction in a High Temperature Ferromagnetic Semiconductor
• Dephasing in (Ga,Mn)As nanowires and rings

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