Weak localization in GaMnAs: evidence of impurity band transport

Abstract

We report the observation of negative magnetoresistance in the ferromagnetic semiconductor GaMnAs at low temperatures ($T<3$ K) and low magnetic fields ($0<B<20$ mT). We attribute this effect to weak localization. Observation of weak localization provides a strong evidence of impurity band transport in these materials, since for valence band transport one expects either weak anti-localization due to strong spin-orbit interactions or total suppression of interference by intrinsic magnetization. In addition to the weak localization, we observe Altshuler-Aronov electron-electron interactions effect in this material.

arXiv comment5 pages, 4 figure

References in corpus (13)

• Effects of Disorder on Ferromagnetism in Diluted Magnetic Semiconductors
• Interlayer coupling in ferromagnetic semiconductor superlattices
• Transition temperature of ferromagnetic semiconductors: a dynamical mean field study
• Impurity Band Conduction in a High Temperature Ferromagnetic Semiconductor
• First-principles investigation of the assumptions underlying Model-Hamiltonian approaches to ferromagnetism of 3d impurities in III-V semiconductors
• A disordered RKKY lattice mean field theory for ferromagnetism in diluted magnetic semiconductors
• Anisotropic Magnetoresistance in Ga${}_{1-x}$Mn${}_x$As
• Domain walls and the conductivity of mesoscopic ferromagnets
• Quantum interference and electron-electron interactions at strong spin-orbit coupling in disordered systems
• Single-Band Model for Diluted Magnetic Semiconductors: Dynamical and Transport Properties and Relevance of Clustered States
• Dephasing in (Ga,Mn)As nanowires and rings
• Universal conductance fluctuations in epitaxial GaMnAs ferromagnets: structural and spin disorder
• Low-field magnetoresistance in GaAs 2D holes

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