Anomalous Fermi level behavior in GaMnAs at the onset of ferromagnetism
arXiv:1208.0575 · doi:10.1063/1.4816133
Abstract
We present the systematic study of the resonant tunneling spectroscopy on a series of ferromagnetic-semiconductor Ga1-xMnxAs with the Mn content x from ~0.01 to 3.2%. The Fermi level of Ga1-xMnxAs exists in the band gap in the whole x region. The Fermi level is closest to the valence band (VB) at x=1.0% corresponding to the onset of ferromagnetism near the metal-insulator transition (MIT), but it moves away from the VB as x increasing or decreasing from 1.0%. This anomalous behavior of the Fermi level indicates that the ferromagnetism and MIT emerge in the Mn-derived impurity band.
4 pages, 4 figures, 1 table (minor revision)
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Cited by in corpus (4)
- On the origin of magnetism in (Ga,Mn)As: from paramagnetic through superparamagnetic to ferromagnetic phase
- Anomalous Fermi level behavior in GaMnAs at the onset of ferromagnetism
- Bandgap narrowing in Mn doped GaAs probed by room-temperature photoluminescence
- Artificial control of the bias-voltage dependence of tunnelling anisotropic magnetoresistance using quantization in a single-crystal ferromagnet