Trends in ferromagnetism, hole localization, and acceptor level depth for Mn substitution in

Abstract

We examine the intrinsic mechanism of ferromagnetism in dilute magnetic semiconductors by analyzing the trends in the electronic structure as the host is changed from GaN to GaP, GaAs and GaSb, keeping the transition metal impurity fixed. In contrast with earlier interpretations which depended on the host semiconductor, we found that a single mechanism is sufficient to explain the ferromagnetic stabilization energy for the entire series.

4 figures; To appear in Appl. Phys. Lett

References in corpus (3)

• Ferromagnetic semiconductors
• First-principles investigation of the assumptions underlying Model-Hamiltonian approaches to ferromagnetism of 3d impurities in III-V semiconductors
• Ferromagnetism of magnetic semiconductors--Zhang-Rice limit

Cited by in corpus (24)

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• Dilute ferromagnetic semiconductors: Physics and spintronic structures
• Prospects of high temperature ferromagnetism in (Ga,Mn)As semiconductors
• Origin and control of high-temperature ferromagnetism in semiconductors
• Controlling Curie temperature in (Ga,Ms)As through location of the Fermi level within the impurity band
• Unraveling the Jahn-Teller effect in Mn doped GaN using the Heyd-Scuseria-Ernzerhof hybrid functional
• Ferromagnetism in Ga1-xMnxP: evidence for inter-Mn exchange mediated by localized holes within a detached impurity band
• Unveiling the impurity band inducing ferromagnetism in magnetic semiconductor (Ga,Mn)As
• Experimental probing of exchange interactions between localized spins in the dilute magnetic insulator (Ga,Mn)N
• High-energy spectroscopic study of the III-V nitride-based diluted magnetic semiconductor Ga${}_{1-x}$Mn${}_x$N
• Unified picture for diluted magnetic semiconductors
• First Principles Electronic Structure of Mn doped GaAs, GaP, and GaN semiconductors
• Magnetocrystalline anisotropy and magnetization reversal in GaMnP synthesized by ion implantation and pulsed-laser melting
• Anomalous Fermi level behavior in GaMnAs at the onset of ferromagnetism
• Magnetic interactions of substitutional Mn pairs in GaAs
• Depth profile high-energy spectroscopic study of Mn-doped GaN prepared by thermal diffusion
• Infrared conductivity of hole accumulation and depletion layers in (Ga,Mn)As- and (Ga,Be)As-based electric field-effect devices
• Transport in the metallic regime of Mn doped III-V Semiconductors
• Impact of Next-Nearest-Neighbor hopping on Ferromagnetism in Diluted Magnetic Semiconductors
• Quantum confinement : A route to enhance the Curie temperature of Mn doped GaAs
• Trends in Ferromagnetism in Mn doped dilute III-V alloys from a density functional perspective
• Mn induced modifications of Ga 3d photoemission from (Ga, Mn)As: evidence for long range effects
• Mn L3,2 X-ray absorption and magnetic circular dichroism in ferromagnetic Ga1-xMnxP