Depth profile high-energy spectroscopic study of Mn-doped GaN prepared by thermal diffusion

Abstract

We have performed an $in$-$situ$ depth profile study of Mn-doped GaN prepared by a low temperature thermal diffusion method using photoemission and x-ray absorption spectroscopy. It was revealed from the core-level photoemission measurements that Mn ions are diffused into a deep ($\sim$ 70 Å) region of the GaN substrates and that the line shapes of Mn 3$d$ partial density of states obtained by resonant photoemission measurements was close to that of Ga${}_{1-x}$Mn${}_x$N thin films grown by molecular-beam epitaxy. From x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD) measurements at the Mn $L$-edge, it was revealed that the doped Mn ions were in the divalent Mn${}^{2+}$ state and primarily paramagnetic. In magnetization measurements, weak hysteresis was detected in samples prepared using $p$-type GaN substrates while samples using $n$-type GaN substrates showed only paramagnetism.

arXiv comment19pages, 13figures

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• High-energy spectroscopic study of the III-V nitride-based diluted magnetic semiconductor Ga${}_{1-x}$Mn${}_x$N
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Cited by in corpus (2)

• Spinodal nanodecomposition in magnetically doped semiconductors
• Depth profile photoemission study of thermally diffused Mn/GaAs (001) interfaces