Ferromagnetism of magnetic semiconductors--Zhang-Rice limit

Abstract

It is suggested that p-d hybridization contributes significantly to the hole binding energy E_b of Mn acceptors in III-V compounds, leading in an extreme case to the formation of Zhang-Rice-like small magnetic polarons. The model explains both strong increase of E_b and evolution of Mn spin-resonance spectrum with the magnitude of valence-band offsets. For such a structure of Mn impurity in III-V materials, possible models accounting for the recently determined Curie temperature of about 940 K in a compensated Ga(0.91)Mn(0.09)N are discussed.

4 RevTex pages, 2 figures

References in corpus (4)

• Molecular Beam Epitaxy of Wurtzite (Ga,Mn)N Films on Sapphire(0001) Showing the Ferromagnetic Behaviour at Room Temperature
• Strong ferromangnetism and weak antiferroamgnetism in double perovskites: Sr${}_2$Fe{/it M}O${}_6$ ({/it M}=Mo, W and Re)
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