Hole states in wide band-gap diluted magnetic semiconductors and oxides
arXiv:cond-mat/0703278 · doi:10.1103/PhysRevB.77.085208
Abstract
Puzzling disagreement between photoemission and optical findings in magnetically doped GaN and ZnO is explained within a generalized alloy theory. The obtained results show that the strong coupling between valence-band holes and localized spins gives rise to a mid-gap Zhang-Rice-like state, to a sign reversal of the apparent p-d exchange integral, and to an increase of the band-gap with the magnetic ion concentration.
5 pages, 3 figures
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- Effects related to deposition temperature of ZnCoO films grown by Atomic Layer Deposition - uniformity of Co distribution, structural, optical, electrical and magnetic properties
- Puzzling magneto-optical properties of ZnMnO films
- Tight-binding theory of spin-spin interactions, Curie temperatures, and quantum Hall effects in topological (Hg,Cr)Te in comparison to non-topological (Zn,Cr)Te, and (Ga,Mn)N
- From narrow-gap and semimagnetic semiconductors to spintronics and topological matter: a life with spins