paper

Hole states in wide band-gap diluted magnetic semiconductors and oxides

arXiv:cond-mat/0703278 · doi:10.1103/PhysRevB.77.085208

Abstract

Puzzling disagreement between photoemission and optical findings in magnetically doped GaN and ZnO is explained within a generalized alloy theory. The obtained results show that the strong coupling between valence-band holes and localized spins gives rise to a mid-gap Zhang-Rice-like state, to a sign reversal of the apparent p-d exchange integral, and to an increase of the band-gap with the magnetic ion concentration.

5 pages, 3 figures

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