Tight-binding theory of spin-spin interactions, Curie temperatures, and quantum Hall effects in topological (Hg,Cr)Te in comparison to non-topological (Zn,Cr)Te, and (Ga,Mn)N
arXiv:2310.19856 · doi:10.1103/PhysRevB.110.165201
Abstract
Earlier theoretical results on - and - exchange interactions for zinc-blende semiconductors with and ions are revisited and extended by including contributions beyond the dominating ferromagnetic (FM) superexchange term [i.e., the interband Bloembergen-Rowland-Van Vleck contribution and antiferromagnetic (AFM) two-electron term], and applied to topological Cr-doped HgTe and non-topological (Zn,Cr)Te and (Ga,Mn)N in zinc-blende and wurtzite crystallographic structures. From the obtained values of the - exchange integrals , and by combining the Monte-Carlo simulations with the percolation theory for randomly distributed magnetic ions, we determine magnitudes of Curie temperatures for and and compare to available experimental data. Furthermore, we find that competition between FM and AFM - interactions can lead to a spin-glass phase in the case of . This competition, along with a relatively large magnitude of the AF - exchange energy can stabilize the quantum spin Hall effect, but may require the application of tilted magnetic field to observe the quantum anomalous Hall effect in HgTe quantum wells doped with Cr, as confirmed by the Chern number determination.
19 pages, 11 figures
References in corpus (12)
- Quantized Anomalous Hall Effect in Magnetic Topological Insulators
- Quantum Anomalous Hall Effect in HgMnTe Quantum Wells
- Colloquium: Quantum anomalous Hall effect
- Progress and prospects in magnetic topological materials
- Origin and control of high-temperature ferromagnetism in semiconductors
- Conductance of a helical edge liquid coupled to a magnetic impurity
- Hole states in wide band-gap diluted magnetic semiconductors and oxides
- Quantum anomalous Hall edge channels survive up to the Curie temperature
- Electron-hole contribution to the apparent s-d exchange interaction in III-V diluted magnetic semiconductors
- Effects of charge dopants in quantum spin Hall materials
- Quantitative theory of backscattering in topological HgTe and (Hg,Mn)Te quantum wells: acceptor states, Kondo effect, precessional dephasing, and bound magnetic polaron
- CdTe and HgTe doped with V, Cr, and Mn -- prospects for the quantum anomalous Hall effect
Cited by in corpus (4)
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- Electric field manipulation of magnetization in an insulating dilute ferromagnet through piezoelectromagnetic coupling
- Ferromagnetic Resonance in a Magnetically Dilute Percolating Ferromagnet: An Experimental and Theoretical Study
- Role of magnetic doping in topological HgTe and application of the Gram-Schmidt method for computing impurity states in quantum wells