Effects of s,p - d and s - p exchange interactions probed by exciton magnetospectroscopy in (Ga,Mn)N

Abstract

Near band-gap photoluminescence and reflectivity in magnetic field are employed to determine the exchange-induced splitting of free exciton states in paramagnetic wurtzite Ga1-xMnxN, x < 1%, grown on sapphire substrates by metal-organic vapor phase epitaxy. The band gap is found to increase with x. The giant Zeeman splitting of all three excitons A, B and C is resolved, enabling the determination of the apparent exchange integrals N0alpha(app) = 0.0 +/- 0.1 eV and N0beta(app) = +0.8 +/- 0.2 eV. These non-standard values and signs of the s - d and p - d exchange energies are explained in terms of recent theories that suggest a contribution of the electron-hole exchange to the spin splitting of the conduction band and a renormalization of the free hole spin-splitting by a large p - d hybridization. According to these models, in the limit of a strong p - d coupling, the band gap of (Ga,Mn)N increases with x and the order of hole spin subbands is reversed, as observed.

arXiv comment8 pages, 5 figures

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• Stretching magnetism with an electric field in a nitride semiconductor
• Fermi level and bands offsets determination in insulating (Ga,Mn)N/GaN structures
• Influence of s,p-d and s-p exchange couplings on exciton splitting in (Zn,Mn)O
• Fe dopant in ZnO: 2+ vs 3+ valency and ion-carrier s,p-d exchange interaction
• Upper bound for the s-d exchange integral in n-(Ga,Mn)N:Si from magnetotransport studies
• Relation between exciton splittings, magnetic circular dichroism, and magnetization in wurtzite (Ga,Fe)N
• Angle Dependence of Photonic Enhancement of Magneto-Optical Kerr Effect in DMS Layers
• Raman scattering studies of the lateral Mn distribution in MBE-grown Ga1-xMnxN epilayers
• Determination of the Fermi Level Position in Dilute Magnetic Ga${}_{1-x}$Mn${}_x$N Films
• Resonant excitation of infra-red emission in GaN:(Mn,Mg)
• Tight-binding theory of spin-spin interactions, Curie temperatures, and quantum Hall effects in topological (Hg,Cr)Te in comparison to non-topological (Zn,Cr)Te, and (Ga,Mn)N
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