Confinement engineering of s-d exchange interactions in GaMnAs quantum wells

Abstract

Recent measurements of coherent electron spin dynamics reveal an antiferromagnetic s-d exchange coupling between conduction band electrons and electrons localized on Mn{2+} impurities in GaMnAs quantum wells. Here we discuss systematic measurements of the s-d exchange interaction in GaMnAs/AlGaAs quantum wells with different confinement potentials using time-resolved Kerr rotation. Extending previous investigations of the dependence of the s-d exchange, N{0}alpha, on well width, we find that its magnitude also depends on well depth. Both phenomena reduce to a general dependence on confinement energy, described by a band-mixing model of confinement-induced kinetic exchange in the conduction band.

4 pages, 5 figures

References in corpus (4)

• Magnetotransport properties of (Ga,Mn)As investigated at low temperature and high magnetic field
• Structural, electrical, and magneto-optical characterization of paramagnetic GaMnAs quantum wells
• Antiferromagnetic s-d exchange coupling in GaMnAs
• Optoelectronic control of spin dynamics at near-THz frequencies in magnetically doped quantum wells

Cited by in corpus (9)

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• Optical Properties of III-Mn-V Ferromagnetic Semiconductors
• Spin-polarized Mn${}^{2+}$ emission from Manganese-doped colloidal nanocrystals
• Observation of spontaneous spin-splitting in the band structure of an n-type zinc-blende ferromagnetic semiconductor
• Asymmetry in effective fields of spin-orbit torques in Pt/Co/Pt stacks
• Electron-hole contribution to the apparent s-d exchange interaction in III-V diluted magnetic semiconductors
• The influence of electrostatic potentials on the apparent s-d exchange energy in III-V diluted magnetic semiconductors
• Effects of s,p - d and s - p exchange interactions probed by exciton magnetospectroscopy in (Ga,Mn)N
• Upper bound for the s-d exchange integral in n-(Ga,Mn)N:Si from magnetotransport studies