Electron-hole contribution to the apparent s-d exchange interaction in III-V diluted magnetic semiconductors

Abstract

Spin splitting of photoelectrons in p-type and electrons in n-type III-V Mn-based diluted magnetic semiconductors is studied theoretically. It is demonstrated that the unusual sign and magnitude of the apparent s-d exchange integral reported for GaAs:Mn arises from exchange interactions between electrons and holes bound to Mn acceptors. This interaction dominates over the coupling between electrons and Mn spins, so far regarded as the main source of spin-dependent phenomena. A reduced magnitude of the apparent s-d exchange integral found in n-type materials is explained by the presence of repulsive Coulomb potentials at ionized Mn acceptors and a bottleneck effect.

9 pages, 6 figures; in this version the value of the bound hole g-factor is corrected and cond-mat/0505126 is included as section VI

References in corpus (10)

• Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors
• Theory of ferromagnetic (III,Mn)V semiconductors
• Spatial structure of an individual Mn acceptor in GaAs
• Optically probing the fine structure of a single Mn atom in an InAs quantum dot
• Large Bychkov-Rashba spin-orbit coupling in high-mobility GaN/AlGaN heterostructures
• Structural, electrical, and magneto-optical characterization of paramagnetic GaMnAs quantum wells
• Antiferromagnetic s-d exchange coupling in GaMnAs
• Suppression of electron spin relaxation in Mn-doped GaAs
• Confinement engineering of s-d exchange interactions in GaMnAs quantum wells
• Disorder, spin-orbit, and interaction effects in dilute ${\mathrm{Ga}}_{1-x}{\mathrm{Mn}}_x\mathrm{As}$

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• Spin-orbit coupling effect in (Ga,Mn)As films: anisotropic exchange interactions and magnetocrystalline anisotropy
• Effects of s,p - d and s - p exchange interactions probed by exciton magnetospectroscopy in (Ga,Mn)N
• Effects of charge dopants in quantum spin Hall materials
• Quantitative theory of backscattering in topological HgTe and (Hg,Mn)Te quantum wells: acceptor states, Kondo effect, precessional dephasing, and bound magnetic polaron
• Upper bound for the s-d exchange integral in n-(Ga,Mn)N:Si from magnetotransport studies
• Tight-binding theory of spin-spin interactions, Curie temperatures, and quantum Hall effects in topological (Hg,Cr)Te in comparison to non-topological (Zn,Cr)Te, and (Ga,Mn)N
• Spin Hall magnetoresistance in Pt/(Ga,Mn)N devices
• Magnetooptical Study of Zeeman Effect in Mn modulation-doped InAs/InGaAs/InAlAs Quantum Well Structures
• From narrow-gap and semimagnetic semiconductors to spintronics and topological matter: a life with spins