Electron spin relaxation in paramagnetic Ga(Mn)As quantum wells

Abstract

Electron spin relaxation in paramagnetic Ga(Mn)As quantum wells is studied via the fully microscopic kinetic spin Bloch equation approach where all the scatterings, such as the electron-impurity, electron-phonon, electron-electron Coulomb, electron-hole Coulomb, electron-hole exchange (the Bir-Aronov-Pikus mechanism) and the $s$-$d$ exchange scatterings, are explicitly included. The Elliot-Yafet mechanism is also incorporated. From this approach, we study the spin relaxation in both $n$-type and $p$-type Ga(Mn)As quantum wells. For $n$-type Ga(Mn)As quantum wells where most Mn ions take the interstitial positions, we find that the spin relaxation is always dominated by the DP mechanism in metallic region. Interestingly, the Mn concentration dependence of the spin relaxation time is nonmonotonic and exhibits a peak. This behavior is because that the momentum scattering and the inhomogeneous broadening have different density dependences in the non-degenerate and degenerate regimes. For $p$-type Ga(Mn)As quantum wells, we find that Mn concentration dependence of the spin relaxation time is also nonmonotonic and shows a peak. Differently, this behavior is because that the $s$-$d$ exchange scattering (or the Bir-Aronov-Pikus) mechanism dominates the spin relaxation in the high Mn concentration regime at low (or high) temperature, whereas the DP mechanism determines the spin relaxation in the low Mn concentration regime. The Elliot-Yafet mechanism also contributes the spin relaxation at intermediate temperature. The spin relaxation time due to the DP mechanism increases with Mn concentration due to motional narrowing, whereas those due to the spin-flip mechanisms decrease with Mn concentration, which thus leads to the formation of the peak.... (The remaining is omitted due to the space limit)

12 pages, 8 figures, Phys. Rev. B 79, 2009, in press

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• Electron spin relaxation in intrinsic bulk InP semiconductor
• Non-Markovian spin transfer dynamics in magnetic semiconductors despite short memory times
• Influence of non-magnetic impurity scattering on the spin dynamics in diluted magnetic semiconductors
• Comparison between a quantum kinetic theory of spin transfer dynamics in Mn doped bulk semiconductors and its Markov limit for non-zero Mn magnetization
• Ultrafast spin dynamics in II-VI diluted magnetic semiconductors with spin-orbit interaction
• Quantum kinetic equations for the ultrafast spin dynamics of excitons in diluted magnetic semiconductor quantum wells after optical excitation
• Trend reversal in the magnetic-field dependence of exciton spin-transfer rates in diluted magnetic semiconductors due to non-Markovian dynamics
• Carrier-impurity spin transfer dynamics in paramagnetic II-VI diluted magnetic semiconductors in the presence of a wave-vector-dependent magnetic field
• Effective Equations for the Precession Dynamics of Electron Spins and Electron-Impurity Correlations in Diluted Magnetic Semiconductors
• Electron spin relaxation in $p$-type GaAs quantum wells
• Non-perturbative Correlation Effects in Diluted Magnetic Semiconductors
• Phonon-induced quantum ratchet in the exciton spin dynamics in diluted magnetic semiconductors in a magnetic field
• Spin diffusion in $n$-type (111) GaAs quantum wells
• Effect of nonequilibrium phonons on hot-electron spin relaxation in n-type GaAs quantum wells
• Role of excited states in the dynamics of excitons and their spins in diluted magnetic semiconductors
• Electron spin rephasing in $n$-type (001) GaAs quantum wells
• Calculation of impurity density and electron-spin relaxation times in p-type GaAs:Mn