Control of spin coherence in -type GaAs quantum wells using strain
arXiv:cond-mat/0412385 · doi:10.1103/PhysRevB.72.033311
Abstract
We show that the bulk-inversion-asymmetry-type strain-induced spin-orbit coupling can be used to effectively modify the Dresselhaus spin splitting in (001) GaAs quantum wells with small well width and the resulting spin lifetime can be increased by two orders of magnitude to nanoseconds under right conditions. The efficiency of this strain manipulation of the spin dephasing time under different conditions such as temperature, electric field and electron density is investigated in detail.
4 pages, 5 figures in eps format
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Cited by in corpus (17)
- Spin dynamics in semiconductors
- Theory of strain in single-layer transition metal dichalcogenides
- Electron spin relaxation in bulk III-V semiconductors from a fully microscopic kinetic spin Bloch equation approach
- Spin relaxation in -type GaAs quantum wells from a full microscopic approach
- Hole spin dephasing in -type semiconductor quantum wells
- Electron spin relaxation in paramagnetic Ga(Mn)As quantum wells
- Spin relaxation under identical Dresselhaus and Rashba coupling strengths in GaAs quantum wells
- Unified Description of the Intrinsic Spin-Hall Effects
- Spin relaxation in quantum dots with random spin-orbit coupling
- Spin diffusion/transport in -type GaAs quantum wells
- Gapped triplet -wave superconductivity in strong spin-orbit-coupled semiconductor quantum wells in proximity to -wave superconductor
- Multi-valley spin relaxation in the presence of high in-plane electric fields in -type GaAs quantum wells
- Kinetics of spin coherence of electrons in -type InAs quantum wells under intense terahertz laser fields
- Spin relaxation time, spin dephasing time and ensemble spin dephasing time in -type GaAs quantum wells
- Strain-assisted spin manipulating and the discerption of strain-induced spin splitting
- Electron spin relaxation in -type GaAs quantum wells
- Effect of Ka-band Microwave on the spin dynamics of electrons in a GaAs/Al0.35Ga0.65As heterostructure