Control of spin coherence in $n$-type GaAs quantum wells using strain

Abstract

We show that the bulk-inversion-asymmetry-type strain-induced spin-orbit coupling can be used to effectively modify the Dresselhaus spin splitting in (001) GaAs quantum wells with small well width and the resulting spin lifetime can be increased by two orders of magnitude to nanoseconds under right conditions. The efficiency of this strain manipulation of the spin dephasing time under different conditions such as temperature, electric field and electron density is investigated in detail.

4 pages, 5 figures in eps format

References in corpus (5)

• Current induced electron spin polarization in strained semiconductors
• Hot-electron effect in spin dephasing in $n$-type GaAs quantum wells
• Multi-subband effect in spin dephasing in semiconductor quantum wells
• Control of Electron Spin Coherence Using Landau Level Quantization in a Two-Dimensional Electron Gas
• Manipulation of spin dephasing in InAs quantum wires

Cited by in corpus (1)

• Spin relaxation under identical Dresselhaus and Rashba coupling strengths in GaAs quantum wells