Manipulation of spin dephasing in InAs quantum wires

Abstract

The spin dephasing due to the Rashba spin-orbit coupling, especially its dependence on the direction of the electric field is studied in InAs quantum wire. We find that the spin dephasing is strongly affected by the angle of Rashba effective magnetic field and the applied magnetic field. The nonlinearity in spin dephasing time versus the direction of the electric field shows a potential evenue to manipulate the spin lifetime in spintronic device. Moreover, we figure out a quantity that can well represent the inhomogeneous broadening of the system which may help us to understand the many-body spin dephasing due to the Rashba effect.

4 pages, 3 figures

References in corpus (6)

• High temperature spin dephasing in n-typed GaAs quantum wells
• Kinetics of spin coherence of electrons in an undoped semiconductor quantum well
• Kinetic theory of spin transport in n-typed semiconductor quantum wells
• Longitudinal spin decoherence in spin diffusion in semiconductors
• Rashba-effect-induced spin dephasing in n-typed InAs quantum wells
• Spin dephasing in n-typed GaAs quantum wells in the presence of high magnetic fields in Voigt configuration

Cited by in corpus (9)

• Spin dynamics in semiconductors
• Hot-electron effect in spin dephasing in $n$-type GaAs quantum wells
• Spin relaxation in $n$-type GaAs quantum wells from a full microscopic approach
• Spin relaxations in semiconductor quantum dots
• Control of spin coherence in $n$-type GaAs quantum wells using strain
• Spin relaxation time, spin dephasing time and ensemble spin dephasing time in $n$-type GaAs quantum wells
• Hole spin relaxation in $p$-type GaAs quantum wires
• Hole spin relaxation in [001] strained asymmetric Si/SiGe and Ge/SiGe quantum wells
• Electron spin relaxation in n-type InAs quantum wires