Rashba-effect-induced spin dephasing in n-typed InAs quantum wells

Abstract

We perform a many-body investigation of the spin dephasing in $n$-typed InAs quantum wells under moderate magnetic fields in the Voigt configuration by constructing and numerically solving the kinetic Bloch equations. We obtain the spin dephasing time due to the Rashba effect together with the spin conserving scattering such as the electron-phonon, the electron-nonmagnetic impurity as well as the electron-electron Coulomb scattering. By varying the initial spin polarization, temperature, impurity density, applied magnetic field and the interface electric field, we are able to study the spin dephasing time under various conditions. For the electron density and quantum well width we study, the many-body effect dominates the spin dephasing. Moreover, we find an anomalous resonance peak in the spin dephasing time for high initial spin polarization under moderate magnetic fields.

arXiv comment10 pages, 8 figures in eps

References in corpus (7)

• Spin Relaxation Anisotropy in Two-Dimensional Semiconductor Systems
• Spin relaxation of conduction electrons
• Electron Spin Decoherence in Bulk and Quantum Well Zincblende Semiconductors
• Kinetics of spin coherence of electrons in an undoped semiconductor quantum well
• Kinetic theory of spin transport in n-typed semiconductor quantum wells
• Magnetic-field dependence of electron spin relaxation in n-type semiconductors
• Longitudinal spin decoherence in spin diffusion in semiconductors

Cited by in corpus (6)

• Hot-electron effect in spin dephasing in $n$-type GaAs quantum wells
• Coherent Spin Precession and Lifetime-Limited Spin Dephasing in CsPbBr3 Perovskite Nanocrystals
• Effects of strain, electric, and magnetic fields on lateral electron spin transport in semiconductor epilayers
• Semiclassical kinetic theory of electron spin relaxation in semiconductors
• Manipulation of spin dephasing in InAs quantum wires
• Many-body effect in spin dephasing in n-typed GaAs quantum wells