Spin relaxation in $n$-type GaAs quantum wells from a full microscopic approach

Abstract

We perform a full microscopic investigation on the spin relaxation in $n$-type (001) GaAs quantum wells with Al${}_{0.4}$Ga${}_{0.6}$As barrier due to the D'yakonov-perel' mechanism from nearly 20 K to the room temperature by constructing and numerically solving the kinetic spin Bloch equations. We consider all the relevant scattering such as the electron--acoustic-phonon, the electron--longitudinal-optical-phonon, the electron--nonmagnetic-impurity and the electron-electron Coulomb scattering to the spin relaxation. The spin relaxation times calculated from our theory with a fitting spin splitting parameter are in good agreement with the experimental data by Ohno {\em et al.} [Physica E {\bf 6}, 817 (2000)] over the whole temperature regime (from 20 K to 300 K). The value of the fitted spin splitting parameter agrees with many experiments and theoretical calculations. We further show the temperature dependence of the spin relaxation time under various conditions such as electron density, impurity density and well width. We predict a peak solely due to the Coulomb scattering in the spin relaxation time at low temperature ($<50$ K) in samples with low electron density ({\em e.g.}, density less than $1\times 10^{11}$ cm${}^{-2}$) but high mobility. This peak disappears in samples with high electron density ({\em e.g.} $2\times 10^{11}$ cm${}^{-2}$) and/or low mobility. The hot-electron spin kinetics at low temperature is also addressed with many features quite different from the high temperature case predicted.

10 pages, 5 figures, to be published in PRB

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Cited by in corpus (51)

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• Electron spin relaxation in bulk III-V semiconductors from a fully microscopic kinetic spin Bloch equation approach
• Effect of initial spin polarization on spin dephasing and electron g factor in a high-mobility two-dimensional electron system
• Electron spin relaxation due to D'yakonov-Perel' and Elliot-Yafet mechanisms in monolayer MoS${}_2$: Role of intravalley and intervalley processes
• Detection of large magneto-anisotropy of electron spin dephasing in a high-mobility two-dimensional electron system in a $[001]$ GaAs/AlGaAs quantum well
• Anisotropic spin transport in GaAs quantum wells in the presence of competing Dresselhaus and Rashba spin-orbit-coupling strengths
• Dependence of spin dephasing on initial spin polarization in a high-mobility two-dimensional electron system
• Electron spin relaxation in graphene from a microscopic approach: Role of electron-electron interaction
• Spin relaxation due to the Bir-Aronov-Pikus mechanism in intrinsic and $p$-type GaAs quantum wells from a fully microscopic approach
• Electron spin relaxation in paramagnetic Ga(Mn)As quantum wells
• The Larmor clock and anomalous spin dephasing in silicon
• Effect of electron-electron scattering on spin dephasing in a high-mobility low-density twodimensional electron gas
• Spin-orbit coupling in bulk GaAs
• Electron spin relaxation in GaAs${}_{1-x}$Bi${}_x$: Effects of spin-orbit tuning by Bi incorporation
• Spin diffusion/transport in $n$-type GaAs quantum wells
• Spin relaxation in $n$-type GaAs quantum wells with transient spin grating
• Hole spin relaxation in intrinsic and $p$-type bulk GaAs
• Spin relaxation due to random Rashba spin-orbit coupling in GaAs (110) quantum wells
• Spin relaxation in $n$-type (111) GaAs quantum wells
• Temperature and Electron Density Dependence of Spin Relaxation in GaAs/AlGaAs Quantum Well
• Gapped triplet $p$-wave superconductivity in strong spin-orbit-coupled semiconductor quantum wells in proximity to $s$-wave superconductor
• Multi-valley spin relaxation in the presence of high in-plane electric fields in $n$-type GaAs quantum wells
• Theory of Electron Spin Relaxation in n-Doped Quantum Wells
• Hole spin relaxation in $p$-type (111) GaAs quantum wells
• Kinetics of spin coherence of electrons in $n$-type InAs quantum wells under intense terahertz laser fields
• Electron spin relaxation in bilayer graphene
• Hole spin relaxation in bilayer WSe${}_2$
• Spin relaxation time, spin dephasing time and ensemble spin dephasing time in $n$-type GaAs quantum wells
• Kinetic investigation on extrinsic spin Hall effect induced by skew scattering
• Hole spin relaxation in $p$-type GaAs quantum wires
• Multivalley spin relaxation in $n$-type bulk GaAs in the presence of high electric fields
• Spin dynamics in high-mobility two-dimensional electron systems
• Non-Markovian hole spin kinetics in $p$-type GaAs quantum wells
• Hole spin relaxation and coefficients in Landau-Lifshitz-Gilbert equation in ferromagnetic GaMnAs
• Hydrodynamic model for relaxation of optically injected currents in quantum wells
• Hole spin relaxation in [001] strained asymmetric Si/SiGe and Ge/SiGe quantum wells
• Spin relaxation in sub-monolayer and monolayer InAs structures grown in GaAs matrix
• Electron spin relaxation in $p$-type GaAs quantum wells
• Anomalous D'yakonov-Perel' spin relaxation in semiconductor quantum wells under strong magnetic field in Voigt configuration
• Electron spin relaxation in n-type InAs quantum wires
• Voltage controlled spin precession in InAs quantum wells
• Spin dynamics of electrons in the first excited subband of a high-mobility low-density 2D electron system
• Spin relaxation in $n$-type ZnO quantum wells
• Anomalous D'yakonov-Perel' spin relaxation in InAs (110) quantum wells under strong magnetic field: role of Hartree-Fock self-energy
• Microscopic theory for the Doppler velocimetry of spin propagation in semiconductor quantum wells
• Comment on "Density dependence of electron-spin polarization and relaxation in intrinsic GaAs at room temperature"
• Effect of nonequilibrium phonons on hot-electron spin relaxation in n-type GaAs quantum wells
• Spin diffusion in $n$-type (111) GaAs quantum wells
• Effect of Singwi-Tosi-Land-Sjölander local field correction on spin relaxation in $n$-type GaAs quantum wells at low temperature
• Enhancement of the spin Hall voltage in a reverse-biased planar pn-junction
• Electron spin rephasing in $n$-type (001) GaAs quantum wells