Theory of Electron Spin Relaxation in n-Doped Quantum Wells

Abstract

Recent experiments have demonstrated long spin lifetimes in uniformly n-doped quantum wells. The spin dynamics of exciton, localized, and conduction spins are important for understanding these systems. We explain experimental behavior by invoking spin exchange between all spin species. By doing so we explain quantitatively and qualitatively the striking and unusual temperature dependence in (110)-GaAs quantum wells. We discuss possible future experiments to resolve the pertinent localized spin relaxation mechanisms. In addition, our analysis allows us to propose possible experimental scenarios that will optimize spin relaxation times in GaAs and CdTe quantum wells.

Small corrections made. Accepted to Phys. Rev. B. 8 pages, 5 figures

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• High temperature spin dephasing in n-typed GaAs quantum wells
• Spin coherence of a two-dimensional electron gas induced by resonant excitation of trions and excitons in CdTe/(Cd,Mg)Te quantum wells
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Cited by in corpus (6)

• Spin dynamics in semiconductors
• Spin-flip Raman scattering of the neutral and charged excitons confined in a CdTe/(Cd,Mg)Te quantum well
• Spin-valley dynamics in alloy-based transition metal dichalcogenide heterobilayers
• Long-lived electron spins in a modulation doped (100) GaAs quantum well
• The role of excitons and trions on electron spin polarization in quantum wells
• Tuning Spin Dynamics and Localization Near the Metal-Insulator Transition in Fe/GaAs heterostructures