activity
20082026
most citedSpin-flip induced magnetoresistance in positionally disordered organic solids

94 citations · 481 across the 26 of their papers we have counts for

collaborators

27 papers

cond-mat.mtrl-sci2026

Theory of Electrically Detected Magnetic Resonance of Silicon Vacancy-Related Spin Pairs in Silicon Carbide

David A. Fehr, Corey J. Cochrane, Stephen R. McMillan +3

We present a quantitative theory for simulating the electrically detected magnetic resonance (EDMR) of silicon vacancy-related spin pairs in silicon carbide using steady-state Lind…

cond-mat.mtrl-sci2023

Spin-Dependent Capture Mechanism for Magnetic Field Effects on Interface Recombination Current in Semiconductor Devices

Nicholas J. Harmon, James P. Ashton, Patrick M. Lenahan +1

Electrically detected magnetic resonance (EDMR) and near-zero field magnetoresistance (NZFMR) are techniques that probe defect states at dielectric interfaces critical for metal-ox…

cond-mat.mes-hall2023

Generation of charge current by the Inverse Stern-Gerlach Effect and the suppression of spin transport due to spin counter-current exchange in semiconductors

Nicholas J. Harmon, Emma Z. Kurth, Dana Coleman +1

The spin-orbit interaction is frequently the mechanism by which spin and charge are coupled for spintronic applications. The discovery of spin, a century ago, relied on spin-charge…

cond-mat.mes-hall2022★ 1 cited

Driving a pure spin current from nuclear-polarization gradients

Nicholas J. Harmon, Michael E. Flatté

A pure spin current is predicted to occur when an external magnetic field and a linearly inhomogeneous spin-only field are appropriately aligned. Under these conditions (such as or…

cond-mat.mtrl-sci2020★ 4 cited

Near-Zero-Field Spin-Dependent Recombination Current and Electrically Detected Magnetic Resonance from the Si/SiO interface

Nicholas J. Harmon, James P. Ashton, Patrick M. Lenahan +1

Dielectric interfaces critical for metal-oxide-semiconductor (MOS) electronic devices, such as the Si/SiO MOS field effect transistor (MOSFET), possess trap states that can be…

cond-mat.mes-hall2020

Theory of oblique-field magnetoresistance from spin centers in three-terminal spintronic devices

Nicholas J. Harmon, Michael E. Flatté

We present a general stochastic Liouville theory of electrical transport across a barrier between two conductors that occurs via sequential hopping through a single defect's spin-0…