Distinguishing Spin Relaxation Mechanisms in Organic Semiconductors

Abstract

A theory is introduced for spin relaxation and spin diffusion of hopping carriers in a disordered system. For disorder described by a distribution of waiting times between hops (e.g. from multiple traps, site-energy disorder and/or positional disorder) the dominant spin relaxation mechanisms in organic semiconductors (hyperfine, hopping-induced spin-orbit, and intra-site spin relaxation) each produce different characteristic spin relaxation and spin diffusion dependences on temperature. The resulting unique experimental signatures predicted by the theory for each mechanism in organic semiconductors provide a prescription for determining the dominant spin relaxation mechanism.

5 pages, 2 figures. Accepted into Phys. Rev. Lett

References in corpus (1)

• Relaxation mechanism for electron spin in the impurity band of n-doped semiconductors

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