Spin transport with traps: dramatic narrowing of the Hanle curve
arXiv:1409.0823 · doi:10.1103/PhysRevB.90.241202
Abstract
We study theoretically the spin transport in a device in which the active layer is an organic film with numerous deep in-gap levels serving as traps. A carrier, diffusing between magnetized injector and detector, spends a considerable portion of time on the traps. This new feature of transport does not affect the giant magnetoresistance, which is sensitive only to the mutual orientation of magnetizations of the injector and detector. By contrast, the presence of traps strongly affects the sensitivity of the spin transport to external magnetic field perpendicular to the magnetizations of the electrodes (the Hanle effect). Namely, the Hanle curve narrows dramatically. The origin of such a narrowing is that the spin precession takes place during the entire time of the carrier motion between the electrodes, while the spin relaxation takes place only during diffusive motion between the subsequent traps. If the resulting width of the Hanle curve is smaller than the measurement resolution, observation of the Hanle peak becomes impossible.
arXiv comment5 pages, 3 figures
References in corpus (10)
- Electrical Detection of Spin Transport in Lateral Ferromagnet-Semiconductor Devices
- Spin relaxation in a nanowire organic spin valve: Observation of extremely long spin relaxation times
- Localized states influence spin transport in epitaxial graphene
- Tunneling anisotropic magnetoresistance in organic spin valves
- Distinguishing Spin Relaxation Mechanisms in Organic Semiconductors
- Hanle effect missing in a prototypical organic spintronic device
- Vertical organic spin valves in perpendicular magnetic fields
- Tunnel magnetoresistance in organic spin valves in the regime of multi-step tunneling
- Organic magnetoresistance from deep traps
- Lateral spin injection and detection through electrodeposited Fe/GaAs contacts