Localized states influence spin transport in epitaxial graphene
arXiv:1208.3129 · doi:10.1103/PhysRevLett.110.067209
Abstract
We developed a spin transport model for a diffusive channel with coupled localized states that result in an effective increase of spin precession frequencies and a reduction of spin relaxation times in the system. We apply this model to Hanle spin precession measurements obtained on monolayer epitaxial graphene on SiC(0001) (MLEG). Combined with newly performed measurements on quasi-free-standing monolayer epitaxial graphene on SiC(0001) our analysis shows that the different values for the diffusion coefficient measured in charge and spin transport measurements in MLEG and the high values for the spin relaxation time can be explained by the influence of localized states arising from the buffer layer at the interface between the graphene and the SiC surface.
6 pages, 3 figures, including supplementary material
References in corpus (8)
- Tunneling Spin Injection into Single Layer Graphene (Supplementary Information)
- Tunneling Spin Injection into Single Layer Graphene
- Magnetic Moment Formation in Graphene Detected by Scattering of Pure Spin Currents
- Charge transfer between epitaxial graphene and silicon carbide
- Spin transport in high quality suspended graphene devices
- Long spin relaxation times in wafer scale epitaxial graphene on SiC(0001)
- Contact induced spin relaxation in Hanle spin precession measurements
- Enhancement of spin relaxation time in hydrogenated graphene spin valve devices