Localized states influence spin transport in epitaxial graphene
arXiv:1208.3129 · doi:10.1103/PhysRevLett.110.067209
Abstract
We developed a spin transport model for a diffusive channel with coupled localized states that result in an effective increase of spin precession frequencies and a reduction of spin relaxation times in the system. We apply this model to Hanle spin precession measurements obtained on monolayer epitaxial graphene on SiC(0001) (MLEG). Combined with newly performed measurements on quasi-free-standing monolayer epitaxial graphene on SiC(0001) our analysis shows that the different values for the diffusion coefficient measured in charge and spin transport measurements in MLEG and the high values for the spin relaxation time can be explained by the influence of localized states arising from the buffer layer at the interface between the graphene and the SiC surface.
6 pages, 3 figures, including supplementary material
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Cited by in corpus (18)
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- Tunable Magnetism and Half-Metallicity in Hole-doped Monolayer GaSe
- Spin lifetimes exceeding 12 nanoseconds in graphene non-local spin valve devices
- Interface induced room-temperature ferromagnetism in hydrogenated epitaxial graphene
- Electrical spin injection, transport, and detection in graphene-hexagonal boron nitride van der Waals heterostructures: progress and perspectives
- Enhancement of spin relaxation time in hydrogenated graphene spin valve devices
- Anisotropic intrinsic spin relaxation in graphene due to flexural distortions
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- Spin relaxation in corrugated graphene
- Spin transport in graphene nanostructures
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- Spin transport with traps: dramatic narrowing of the Hanle curve
- Observation of anomalous Hanle spin precession lineshapes resulting from interaction with localized states
- Asymmetric Electron-Hole Decoherence in Ion-Gated Epitaxial Graphene