Influence of impurity spin dynamics on quantum transport in epitaxial graphene
arXiv:1507.03841 · doi:10.1103/PhysRevLett.115.106602
Abstract
Experimental evidence from both spin-valve and quantum transport measurements points towards unexpectedly fast spin relaxation in graphene. We report magnetotransport studies of epitaxial graphene on SiC in a vector magnetic field showing that spin relaxation, detected using weak-localisation analysis, is suppressed by an in-plane magnetic field, , and thereby proving that it is caused at least in part by spinful scatterers. A non-monotonic dependence of effective decoherence rate on reveals the intricate role of scatterers' spin dynamics in forming the interference correction to conductivity, an effect that has gone unnoticed in earlier weak localisation studies
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- Ambipolar charge transport in quasi-free-standing monolayer graphene on SiC obtained by gold intercalation
- Spin relaxation in disordered graphene: Interplay between puddles and defect-induced magnetism
- Weak localization measurements of electronic scattering rates in Li-doped epitaxial graphene
- Influence of spin dynamics of defects on weak localization in paramagnetic 2D metals
- Asymmetric Electron-Hole Decoherence in Ion-Gated Epitaxial Graphene
- Stability of Majorana bound states in the presence of spin-flip scattering