489 citations · 1.6k across the 16 of their papers we have counts for
16 papers
Aluminum oxide nucleation in the early stages of atomic layer deposition on epitaxial graphene
E. Schilirò, R. Lo Nigro, S. E. Panasci +5
In this work, the nucleation and growth mechanism of aluminum oxide (Al2O3) in the early stages of the direct atomic layer deposition (ALD) on monolayer epitaxial graphene (EG) on…
Visualisation of edge effects in side-gated graphene nanodevices
Vishal Panchal, Arseniy Lartsev, Alessandra Manzin +3
Using local scanning electrical techniques we study edge effects in side-gated Hall nanodevices made of epitaxial graphene. We demonstrate that lithographically defined edges of th…
Influence of impurity spin dynamics on quantum transport in epitaxial graphene
Samuel Lara-Avila, Sergey Kubatkin, Oleksiy Kashuba +6
Experimental evidence from both spin-valve and quantum transport measurements points towards unexpectedly fast spin relaxation in graphene. We report magnetotransport studies of ep…
Approaching magnetic ordering in graphene materials by FeCl intercalation
T. H. Bointon, I. Khrapach, R. Yakimova +3
We show the successful intercalation of large area (1 cm) epitaxial few-layer graphene grown on 4H-SiC with FeCl. Upon intercalation the resistivity of this system drops fr…
The effect of bilayer domains on electronic transport properties of epitaxial graphene on SiC
Tom Yager, Arseniy Lartsev, Rositza Yakimova +2
Magnetotransport measurements on Hall bar devices fabricated on purely monolayer epitaxial graphene on Silicon Carbide (SiC/G) show a very tight spread in carrier concentration and…
Quantum Hall Effect and Quantum Point Contact in Bilayer-Patched Epitaxial Graphene
C. J. Chua, M. R. Connolly, A. Lartsev +10
We study an epitaxial graphene monolayer with bilayer inclusions via magnetotransport measurements and scanning gate microscopy at low temperatures. We find that bilayer inclusions…