Quantum Hall Effect and Quantum Point Contact in Bilayer-Patched Epitaxial Graphene
arXiv:1405.5679 · doi:10.1021/nl5008757
Abstract
We study an epitaxial graphene monolayer with bilayer inclusions via magnetotransport measurements and scanning gate microscopy at low temperatures. We find that bilayer inclusions can be metallic or insulating depending on the initial and gated carrier density. The metallic bilayers act as equipotential shorts for edge currents, while closely spaced insulating bilayers guide the flow of electrons in the monolayer constriction, which was locally gated using a scanning gate probe.
arXiv comment5 pages, 5 figures
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- Quantum Hall resistance standards from graphene grown by chemical vapor deposition on silicon carbide
- Quantum Hall effect in polycrystalline graphene: The role of grain boundaries
- Valley filtering using electrostatic potentials in bilayer graphene
- Epitaxial graphene on SiC: Modification of structural and electron transport properties by substrate pretreatment
- Anomalous dissipation mechanism and Hall quantization limit in polycrystalline graphene grown by chemical vapor deposition
- Realization of 5 h/e^2 with graphene quantum Hall resistance array
- Epigraphene : epitaxial graphene on silicon carbide
- Imaging backscattering in graphene quantum point contacts
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- Optimization of epitaxial graphene growth for quantum metrology
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