Quantum resistance metrology using graphene
arXiv:1303.3749 · doi:10.1088/0034-4885/76/10/104501
Abstract
In this paper we review the recent extraordinary progress in the development of a new quantum standard for resistance based on graphene. We discuss the unique properties of this material system relating to resistance metrology and discuss results of the recent highest-ever precision direct comparison of the Hall resistance between graphene and traditional GaAs. We mainly focus our review on graphene expitaxially grown on SiC, a system which so far resulted in the best results. We also brie y discuss progress in the two other graphene material systems, exfoliated graphene and chemical vapour deposition graphene, and make a critical comparison with SiC graphene. Finally we discuss other possible applications of graphene in metrology.
arXiv admin note: substantial text overlap with arXiv:1202.2985
References in corpus (25)
- Electric Field Effect in Atomically Thin Carbon Films
- The electronic properties of graphene
- Two Dimensional Atomic Crystals
- Universal Dynamic Conductivity and Quantized Visible Opacity of Suspended Graphene
- Detection of Individual Gas Molecules Absorbed on Graphene
- Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics
- Room-Temperature Quantum Hall Effect in Graphene
- Unconventional Integer Quantum Hall effect in graphene
- A Mechanical Mass Sensor with Yoctogram Resolution
- Ab initio Study of Graphene on SiC
- Quantized Transport in Graphene p-n Junctions in Magnetic Field
- Charge transfer between epitaxial graphene and silicon carbide
- Encapsulation and Electronic Control of Epitaxial Graphene by Photosensitive Polymers and UV light
- Hot electron cooling by acoustic phonons in graphene
- Quantum-Hall activation gaps in graphene
- Gigahertz quantized charge pumping in graphene quantum dots
- Anomalously strong pinning of the filling factor nu=2 in epitaxial graphene
- Non-adiabadic charge pumping in a hybrid SET transistor
- Precision comparison of the quantum Hall effect in graphene and gallium arsenide
- Quantum resistance metrology in graphene
- Weak localization scattering lengths in epitaxial, and CVD graphene
- Graphene p-n junction Arrays as Quantum-Hall Resistance Standards
- Precision quantization of Hall resistance in transferred graphene
- Observation of the quantum Hall effect in epitaxial graphene on SiC(0001) with oxygen adsorption
- Quantum Hall effect in graphene with twisted bilayer stripe defects
Cited by in corpus (16)
- Spin-Orbit Proximity Effect in Graphene
- Quantum Hall effect in polycrystalline graphene: The role of grain boundaries
- Gate-tunable proximity effects in graphene on layered magnetic insulators
- Quantum Hall Effect and Quantum Point Contact in Bilayer-Patched Epitaxial Graphene
- Precision Quantum Hall Resistance Measurement on Epitaxial Graphene Device in Low Magnetic Field
- Electron energy and temperature relaxation in graphene on a piezoelectric substrate
- Mini array of quantum Hall devices based on epitaxial graphene
- Puddle-induced resistance oscillations in the breakdown of the graphene quantum Hall effect
- Perspectives of HgTe Topological Insulators for Quantum Hall Metrology
- Realization of 5 h/e^2 with graphene quantum Hall resistance array
- Stopping electrons with radio-frequency pulses in the quantum Hall regime
- Cooling of chiral heat transport in the quantum Hall effect graphene
- Programmable quantum Hall bisector: towards a novel resistance standard for quantum metrology
- Suppressed compressibility of quantum Hall effect edge states in epitaxial graphene on SiC
- A microscopic model for the magnetic field driven breakdown of the dissipationless state in the integer and fractional quantum Hall effect
- On valley asymmetry in a topological interaction for quasi-particles