Precision quantization of Hall resistance in transferred graphene
arXiv:1203.1798 · doi:10.1063/1.4704190
Abstract
We show that quantum resistance standards made of transferred graphene reach the uncertainty of semiconductor devices, the current reference system in metrology. A large graphene device (150 \times 30 \mum2), exfoliated and transferred onto GaAs, revealed a quantization with a precision of (-5.1 \pm 6.3) \times 10-9 accompanied by a vanishing longitudinal resistance at current levels exceeding 10 \muA. While such performance had previously only been achieved with epitaxially grown graphene, our experiments demonstrate that transfer steps, inevitable for exfoliated graphene or graphene grown by chemical vapor deposition (CVD), are compatible with the requirements of high quality quantum resistance standards.
References in corpus (12)
- Boron nitride substrates for high-quality graphene electronics
- Electronic transport in two dimensional graphene
- Room-Temperature Quantum Hall Effect in Graphene
- SiC Graphene Suitable For Quantum Hall Resistance Metrology
- Quantum Resistance Standard Based on Epitaxial Graphene
- Anomalously strong pinning of the filling factor nu=2 in epitaxial graphene
- Quantum resistance metrology in graphene
- Graphene, universality of the quantum Hall effect and redefinition of the SI system
- Quantum Hall effect on centimeter scale chemical vapor deposited graphene films
- Quantum Hall effect in exfoliated graphene affected by charged impurities: metrological measurements
- Graphene on Gallium Arsenide: Engineering the visibility
- Magneto-Transport Properties of Exfoliated Graphene on GaAs
Cited by in corpus (17)
- Quantum Hall resistance standards from graphene grown by chemical vapor deposition on silicon carbide
- Quantum resistance metrology using graphene
- Epitaxial graphene on SiC: Modification of structural and electron transport properties by substrate pretreatment
- Piezoelectric surface acoustical phonon limited mobility of electrons in graphene on a GaAs substrate
- Precision Quantum Hall Resistance Measurement on Epitaxial Graphene Device in Low Magnetic Field
- Towards a Graphene-Based Quantum Impedance Standard
- The ampere and the electrical units in the quantum era
- Anomalous dissipation mechanism and Hall quantization limit in polycrystalline graphene grown by chemical vapor deposition
- Electron energy and temperature relaxation in graphene on a piezoelectric substrate
- Nonequilibrium mesoscopic conductance fluctuations as the origin of 1/f noise in epitaxial graphene
- Cooling of chiral heat transport in the quantum Hall effect graphene
- Programmable quantum Hall bisector: towards a novel resistance standard for quantum metrology
- Suppressed compressibility of quantum Hall effect edge states in epitaxial graphene on SiC
- Effect of piezoelectric substrate on phonon-drag thermopower in monolayer graphene
- Capacitive coupling in hybrid Graphene-GaAs nanostructures
- Phonon-drag magnetoquantum oscillations in graphene
- Local breakdown of the quantum Hall effect in narrow single layer graphene Hall devices