Suppressed compressibility of quantum Hall effect edge states in epitaxial graphene on SiC
arXiv:1712.04957 · doi:10.1103/PhysRevB.97.075404
Abstract
We determine conditions for the formation of compressible stripes near the quantum Hall effect (QHE) edges of top-gated epitaxial graphene on Si-terminated SiC (G/SiC) and compare those to graphene exfoliated onto insulating substrate in the field-effect-transistor (GraFET) geometry. For G/SiC, a large density of localised surface states on SiC just underneath graphene layer and charge transfer between them lead both to doping of graphene and to screening of potential profile near its edge. This suppresses formation of compressible stripes near QHE edges in graphene, making them much narrower than the corresponding compressible stripes in GraFETs.
6 pages, version accepted to PRB but with reduced resolution of spectrum figures
References in corpus (18)
- Selective transmission of Dirac electrons and ballistic magnetoresistance of \textit{n-p} junctions in graphene
- Spin Filtered Edge States and Quantum Hall Effect in Graphene
- Edge States and the Quantized Hall Effect in Graphene
- Dissipative Quantum Hall Effect in Graphene near the Dirac Point
- Growth of Epitaxial Graphene: Theory and Experiment
- Creating and Probing Electron Whispering Gallery Modes in Graphene
- Charge transfer between epitaxial graphene and silicon carbide
- Encapsulation and Electronic Control of Epitaxial Graphene by Photosensitive Polymers and UV light
- Anomalously strong pinning of the filling factor nu=2 in epitaxial graphene
- Charge accumulation at the boundaries of a graphene strip induced by a gate voltage: Electrostatic approach
- Quantum Hall resistance standards from graphene grown by chemical vapor deposition on silicon carbide
- Charge and Spin Transport at the Quantum Hall Edge of Graphene
- Operation of graphene quantum Hall resistance standard in a cryogen-free table-top system
- Unconventional Correlation between Quantum Hall Transport Quantization and Bulk State Filling in Gated Graphene Devices
- Precision quantization of Hall resistance in transferred graphene
- Puddle-induced resistance oscillations in the breakdown of the graphene quantum Hall effect
- Cooling of chiral heat transport in the quantum Hall effect graphene
- Quantum Hall effect in epitaxial graphene with permanent magnets
Cited by in corpus (4)
- Long-range nontopological edge currents in charge-neutral graphene
- Edge photocurrent in bilayer graphene due to inter-Landau-level transitions
- Gate electrostatics and quantum capacitance in ballistic graphene devices
- Contacts and upstream modes explain the electron-hole asymmetry in the graphene quantum Hall regime