Quantum Hall effect in epitaxial graphene with permanent magnets
arXiv:1708.06137 · doi:10.1038/srep38393
Abstract
We have observed the well-kown quantum Hall effect (QHE) in epitaxial graphene grown on silicon carbide (SiC) by using, for the first time, only commercial NdFeB permanent magnets at low temperature. The relatively large and homogeneous magnetic field generated by the magnets, together with the high quality of the epitaxial graphene films, enables the formation of well-developed quantum Hall states at Landau level filling factors , commonly observed with superconducting electro-magnets. Furthermore, the chirality of the QHE edge channels can be changed by a top gate. These results demonstrate that basic QHE physics are experimentally accessible in graphene for a fraction of the price of conventional setups using superconducting magnets, which greatly increases the potential of the QHE in graphene for research and applications.
arXiv comment9 pages, 3 figures
References in corpus (19)
- Experimental Observation of Quantum Hall Effect and Berry's Phase in Graphene
- Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics
- Room-Temperature Quantum Hall Effect in Graphene
- Hofstadter's butterfly in moire superlattices: A fractal quantum Hall effect
- Massive Dirac fermions and Hofstadter butterfly in a van der Waals heterostructure
- Cloning of Dirac fermions in graphene superlattices
- Observation of the Fractional Quantum Hall Effect in Graphene
- An Electronic Mach-Zehnder Interferometer
- Quantum Resistance Standard Based on Epitaxial Graphene
- SiC Graphene Suitable For Quantum Hall Resistance Metrology
- Ballistic Josephson junctions in edge-contacted graphene
- Half integer quantum Hall effect in high mobility single layer epitaxial graphene
- Quantum Hall effect in graphene with superconducting electrodes
- Observation of Helical Edge States and Fractional Quantum Hall Effect in a Graphene Electron-hole Bilayer
- Quantum Hall resistance standards from graphene grown by chemical vapor deposition on silicon carbide
- Annihilation of colliding Bogoliubov quasiparticles reveals their Majorana nature
- Phase-space for the breakdown of the quantum Hall effect in epitaxial graphene
- Precision Quantum Hall Resistance Measurement on Epitaxial Graphene Device in Low Magnetic Field
- Impact of graphene quantum capacitance on transport spectroscopy
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